Structure with transistor
First Claim
Patent Images
1. A structure with a transistor comprising:
- a substrate;
a gas barrier layer on the substrate; and
a transistor on the gas barrier layer,wherein the transistor includes an oxide semiconductor layer.
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Accused Products
Abstract
A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.
3801 Citations
8 Claims
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1. A structure with a transistor comprising:
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a substrate; a gas barrier layer on the substrate; and a transistor on the gas barrier layer, wherein the transistor includes an oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a structure with a transistor comprising:
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preparing a substrate with a gas barrier layer thereon; and forming a transistor on the gas barrier layer; wherein an oxide semiconductor layer included in the transistor is formed by a sputter method. - View Dependent Claims (8)
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Specification
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- Resources
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Current AssigneeToppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
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Original AssigneeToppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
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InventorsKon, Masato, Ito, Manabu, Sekine, Norimasa, Ishizaki, Manoru
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/43
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CPC Class CodesH01L 29/78603 characterised by the insula...H01L 29/7869 having a semiconductor body...
