Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
First Claim
1. A thin film transistor (TFT) comprising a gate, a channel layer, a source, and a drain, wherein the channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is a crystallized portion.
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Accused Products
Abstract
Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.
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Citations
23 Claims
- 1. A thin film transistor (TFT) comprising a gate, a channel layer, a source, and a drain, wherein the channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is a crystallized portion.
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8. A method of manufacturing a TFT including a gate, a channel layer, a source, and a drain, the method comprising:
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forming the channel layer using an oxide semiconductor; and crystallizing at least a portion of the channel layer contacting the source and the drain by injecting a metal component into the channel layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification