Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor

• US 20080258140A1
• Filed: 10/30/2007
• Published: 10/23/2008
• Est. Priority Date: 04/20/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Lee, Eun-ha, Kang, Dong-hun, Lee, Jae-cheol, Lim, Hyuck, Kim, Chang-jung
• Granted Patent: US 8,618,543 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

Claims

1. A thin film transistor (TFT) comprising a gate, a channel layer, a source, and a drain, wherein the channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is a crystallized portion.

2. The TFT of claim 1, wherein a portion of the channel layer located between the source and the drain is crystallized.

3. The TFT of claim 1, wherein the entire channel layer is crystallized.

4. The TFT of claim 1, further comprising a metal layer formed on the channel layer under the source and the drain.

5. The TFT of claim 1, wherein the source and the drain are formed of at least one selected from the group consisting of Ti, Mo, Cr, W, Zr, Hf, Nb, Ta, Ag, Au, Al, Cu, Co, Sb, V, Ru, Pt, Pd, Zn, and Mg.

6. The TFT of claim 1, wherein the oxide semiconductor is a(In203).b(Ga203).c(ZnO) doped with a metal, where a, b, and c are real numbers, and a≧

0, b≧

0, and c>

0.

7. The TFT of claim 6, wherein the metal is lanthanum (La) or titanium (Ti).

8. A method of manufacturing a TFT including a gate, a channel layer, a source, and a drain, the method comprising:

forming the channel layer using an oxide semiconductor; and

crystallizing at least a portion of the channel layer contacting the source and the drain by injecting a metal component into the channel layer.

9. The method of claim 8, wherein the injecting of the metal component comprises:

forming a metal layer on the channel layer; and

heat-treating a resulting structure including the metal layer.

10. The method of claim 9, wherein the metal layer is formed to a predetermined thickness such that the metal layer disappears after the heat-treating.

11. The method of claim 9, wherein the metal layer is formed on the channel layer under the source and the drain.

12. The method of claim 9, wherein the forming of the metal layer comprises:

forming the source and the drain on the channel layer; and

forming the metal layer on the source, the drain, and a top surface portion of the channel layer located between the source and the drain.

13. The method of claim 9, wherein the metal layer is formed on side surfaces and a top surface of the channel layer.

14. The method of claim 13, wherein the heat-treating is performed after forming the source and the drain on the metal layer.

15. The method of claim 9, wherein the heat-treating is performed in an nitrogen gas atmosphere in a temperature range of 200°

C. to 450°

C. using a furnace, a rapid thermal annealing (RTA) apparatus, or a laser.

16. The method of claim 8, wherein the injecting of the metal component comprises:

ion-injecting the metal component into the channel layer; and

heat-treating the channel layer.

17. The method of claim 16, wherein the metal component is ion-injected into the entire channel layer or a portion of the channel layer.

18. The method of claim 17, wherein the metal component is ion-injected into the entire channel layer before the source and drain are formed.

19. The method of claim 16, wherein the ion-injecting of the metal component is performed after forming the source and the drain.

20. The method of claim 8, wherein the metal component is titanium (Ti) or lanthanum (La).

21. The method of claim 8, wherein the oxide semiconductor is a(In203).b(Ga203).c(ZnO), where a, b, and c are real numbers, and a≧

0, b≧

0, and c>

0.

22. The method of claim 8, wherein the crystallizing comprises crystallizing a portion of the channel layer located between the source and the drain.

23. The method of claim 8, wherein the crystallizing comprised crystallizing entire channel.