SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE
First Claim
1. A method for manufacturing a semiconductor component, comprising:
- providing a semiconductor material having a major surface;
forming one or more trenches in the semiconductor material; and
forming a field oxide from a peripheral region of the semiconductor material, wherein the one or more trenches extends under the field oxide.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor component resistant to the formation of a parasitic bipolar transistor and a method for manufacturing the semiconductor component using a reduced number of masking steps. A semiconductor material of N-type conductivity having a region of P-type conductivity is provided. A doped region of N-type conductivity is formed in the region of P-type conductivity. Trenches are formed in a semiconductor material and extend through the regions of N-type and P-type conductivities. A field oxide is formed from the semiconductor material such that portions of the trenches extend under the field oxide. The field oxide serves as an implant mask in the formation of source regions. Body contact regions are formed from the semiconductor material and an electrical conductor is formed in contact with the source and body regions. An electrical conductor is formed in contact with the backside of the semiconductor material.
10 Citations
20 Claims
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1. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having a major surface; forming one or more trenches in the semiconductor material; and forming a field oxide from a peripheral region of the semiconductor material, wherein the one or more trenches extends under the field oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor component, comprising:
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providing a semiconductor material having first and second major surfaces, the semiconductor material comprising an epitaxial layer disposed on a semiconductor substrate and having an active area and a peripheral area; forming a plurality of trench structures in the semiconductor material, wherein the plurality of trench structures extend vertically from the first major surface into the epitaxial layer and laterally from the active area to the peripheral area; and forming field oxide from the peripheral area, wherein a portion of the plurality of trenches extends below the field oxide. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A power semiconductor component, comprising:
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a semiconductor material having first and second major surfaces, an active area, and a peripheral area; a layer of impurity material of a first conductivity type extending from the first major surface into the semiconductor material a first distance; a first trench extending from the first major surface into the semiconductor material and from the active area to the peripheral area; a field oxide in the peripheral area, the field oxide over a portion of the first trench that extends to the peripheral area; a layer of polysilicon disposed over a portion of the field oxide; and semiconductor material disposed in the first trench. - View Dependent Claims (17, 18, 19, 20)
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Specification