TRENCH METAL OXIDE SEMICONDUCTOR WITH RECESSED TRENCH MATERIAL AND REMOTE CONTACTS
First Claim
1. A semiconductor device comprising a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, said TMBS device comprising:
- a substrate having formed therein a plurality of first trenches, wherein a conductive material is deposited in said first trenches; and
a source metal layer;
said TMBS device having an active region, wherein within said active region said source metal layer is in electrical contact with said substrate but is isolated from said conductive material disposed within said first trenches, wherein said conductive material within said first trenches is electrically coupled to a contact that is outside of said active region of said TMBS device.
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Accused Products
Abstract
Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.
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Citations
22 Claims
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1. A semiconductor device comprising a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, said TMBS device comprising:
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a substrate having formed therein a plurality of first trenches, wherein a conductive material is deposited in said first trenches; and a source metal layer; said TMBS device having an active region, wherein within said active region said source metal layer is in electrical contact with said substrate but is isolated from said conductive material disposed within said first trenches, wherein said conductive material within said first trenches is electrically coupled to a contact that is outside of said active region of said TMBS device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating a semiconductor device comprising a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, said method comprising:
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forming a plurality of first trenches separated by mesas, said first trenches having sidewalls of a first height; depositing conductive material within said first trenches to a height that is less than said first height; forming a layer of insulating material over said conductive material; forming a source metal layer over a first region that encompasses said first trenches and said mesas, wherein within said first region, said source metal layer is separated from said conductive material by said insulating material; and forming a first electrical contact between said source metal layer and said conductive material in said first trenches, wherein said first electrical contact is outside of said first region. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A semiconductor device comprising a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, said TMBS device comprising:
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a substrate having formed therein a plurality of mesas having sidewalls of a first height; conductive material disposed within a plurality of first trenches located between said mesas, said conductive material filling said first trenches to a second height that is less than said first height; and insulating material separating said conductive material from said substrate and from a source metal layer disposed over said mesas and said first trenches;
wherein, within an active region of said TMBS device, said source metal layer is in electrical contact with said mesas, wherein electrical contact between said conductive material in said first trenches and said source metal layer is made outside of said active region of said TMBS device. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification