SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a semiconductor integrated circuit formed on a front surface of the semiconductor substrate;
a pad electrode disposed on the front surface so as to be connected to the semiconductor integrated circuit;
a capacitor electrode disposed on a back surface of the semiconductor substrate;
an insulation film disposed on the capacitor electrode; and
a wiring layer disposed on the insulation film and connected to the pad electrode,wherein the capacitor electrode, the insulation film and the wiring layer are configured to form a capacitor.
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0 Petitions
Accused Products
Abstract
The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.
74 Citations
6 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a semiconductor integrated circuit formed on a front surface of the semiconductor substrate; a pad electrode disposed on the front surface so as to be connected to the semiconductor integrated circuit; a capacitor electrode disposed on a back surface of the semiconductor substrate; an insulation film disposed on the capacitor electrode; and a wiring layer disposed on the insulation film and connected to the pad electrode, wherein the capacitor electrode, the insulation film and the wiring layer are configured to form a capacitor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification