ON CHIP TRANSFORMER ISOLATOR

• US 20080260050A1
• Filed: 06/24/2008
• Published: 10/23/2008
• Est. Priority Date: 06/03/2004
• Status: Active Grant

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Silicon Laboratories Incorporated
• Inventors: DUPUIS, TIMOTHY
• Granted Patent: US 8,064,872 B2
• Time in Patent Office: Days
• US Class Current: 375/258
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 19/08 Transformers having magnetic bias, e.g. for handling pulses
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

An integrated circuit having voltage isolation capabilities includes a first area of the integrated circuit containing functional circuitry that is located in the substrate of the integrated circuit. A second area of the integrated circuit contains an integrated RF isolation circuitry for voltage isolating the functional circuitry. The RF isolation circuitry is located in the metal layers of the integrated circuit.

Claims

1. An integrated circuit having voltage isolation capabilities, comprising:

a first area of the integrated circuit containing a first group of functional circuitry, the first group of functional circuitry located in a substrate of the integrated circuit;

a second area of the integrated circuit containing a second group of functional circuitry, the second group of functional circuitry located in the substrate of the integrated circuit; and

a third area of the integrated circuit containing integrated RF isolation circuitry for voltage isolating the first group of functional circuitry from the second group of functional circuitry, the RF isolation circuitry located in metal layers of the integrated circuit.

2. An integrated circuit having voltage isolation capabilities, comprising:

a first area of the integrated circuit containing functional circuitry, the functional circuitry located in a substrate of the integrated circuit; and

a second area of the integrated circuit containing integrated RF isolation circuitry for voltage isolating the functional circuitry, the RF isolation circuitry located in metal layers of the integrated circuit wherein the RF isolation circuitry further comprises;

a first coil located on a first metal layer, the first coil connected to the functional circuitry; and

a second coil located on a second metal layer above the first metal layer and substantially non-overlapping the first coil, the second coil electromagnetically coupled to the first coil.

3. An integrated circuit having voltage isolation capabilities, comprising:

a first area of the integrated circuit containing functional circuitry, the functional circuitry located in a substrate of the integrated circuit; and

a second area of the integrated circuit containing integrated at least one RF isolation interface for voltage isolating the functional circuitry, the at least one RF isolation interface located in metal layers of the integrated circuit above the substrate, the at least one RF isolation interface comprising;

a first coil located on a first metal layer, the first coil connected to the functional circuitry;

a second coil located on a second metal layer above the first metal layer and substantially non-overlapping the first coil, the second coil electromagnetically coupled to the first coil;

first and second terminals located on a third metal layer below the first metal layer for interconnecting the first coil with the functional circuitry;

a first pad connected to a first end of the second coil and located within the second coil; and

a second pad connected to a second end of the second coil and located substantially near an edge of the second coil.