APPARATUS AND METHOD FOR PRE AND POST TREATMENT OF ATOMIC LAYER DEPOSITION
First Claim
1. An apparatus for treating a surface of a substrate, comprising:
- a substrate support configured to support the substrate;
a proximity head configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head, wherein the proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate, the proximity head having an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface.
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Accused Products
Abstract
The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In an exemplary embodiment, a proximity head for treating a substrate surface is provided. The proximity head is configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head. The proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate. The proximity head has an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface.
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Citations
21 Claims
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1. An apparatus for treating a surface of a substrate, comprising:
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a substrate support configured to support the substrate; a proximity head configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head, wherein the proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate, the proximity head having an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A proximity head for treating a substrate surface, comprising:
the proximity head configured to dispense a treatment gas to treat an active process region of a substrate surface under the proximity head, wherein the proximity head covers the action process region of the substrate surface and the proximity head includes at least one vacuum channel to pull excess treatment gas from a reaction volume between the proximity head and the substrate, the proximity head having an excitation chamber to excite the treatment gas before the treatment gas being dispensed on the active process region portion of the substrate surface.
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15. A method of treatment a substrate surface, comprising:
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moving a proximity head for surface treatment above a substrate, wherein the proximity head has at least one gas channel configured to dispense a treatment gas on a region of the substrate surface, the proximity head having at least one vacuum channel used to vacuum excess treatment gas from a reaction volume underneath the proximity head, and the proximity head for surface treatment covering the region of the substrate surface; exciting the treatment gas in an excitation chamber of the proximity head before the treatment gas is dispensed on the region of the substrate surface; and dispensing the excited treatment gas on the region of the substrate surface to treat the substrate surface. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification