METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER

• US 20080261149A1
• Filed: 05/13/2008
• Published: 10/23/2008
• Est. Priority Date: 03/31/2004
• Status: Active Grant

• Current Assignee: Akira Fujimoto, Kenichi Ohashi, Koji Asakawa, Takashi Sasaki
• Original Assignee: Akira Fujimoto, Kenichi Ohashi, Koji Asakawa, Takashi Sasaki
• Inventors: Sasaki, Takashi, Asakawa, Koji, Ohashi, Kenichi, Fujimoto, Akira
• Granted Patent: US 7,714,316 B2
• Time in Patent Office: Days
• US Class Current: 430/270.1
• CPC Class Codes: C08F 220/281 and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/67086 with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):

• • (in the general formula (1), R¹ is a hydrogen atom or methyl group; R³ is a cyclic group selected from an alicyclic group and an aromatic group; R⁴ is a polar group; R² is a group represented by the following general formula (2); and j is 0 or 1):

• • (in the general formula (2), R⁵ is a hydrogen atom or methyl group).

Claims

1-21. -21. (canceled)

22. A semiconductor device having a roughened surface comprising a semiconductor substrate;

a first electrode;

a light emitting layer formed above the semiconductor substrate; and

a second electrode;

the semiconductor device being manufactured by a method comprising;

forming a protective film on a part of surfaces of the semiconductor device, the semiconductor device having an exposed surface, the protective film comprising an acid etching resistance material having a repeating unit represented by the following general formula (1);

23. The semiconductor device according to claim 22, wherein the protective film covers at least the first electrode and the second electrode.

24. The semiconductor device according to claim 22, wherein the exposed surface is a side surface of the semiconductor substrate.

25. The semiconductor device according to claim 24, wherein the light emitting layer is formed above a part of surfaces of the semiconductor substrate.

26. The semiconductor device according to claim 22, wherein the protective film comprises a lower protective film and an upper protective film on the lower protective film.

27. The semiconductor device according to claim 26, wherein the upper protective film is formed of a novolac resin.

28. The semiconductor device according to claim 22, wherein the semiconductor device is a light emitting element.

29. The semiconductor device according to claim 23, wherein the first electrode is provided on a surface of the semiconductor substrate.

30. The semiconductor device according to claim 29, wherein the second electrode is provided above the light emitting layer.

31. The semiconductor device according to claim 22, wherein R³ in the general formula (1) is an alicyclic group selected from adamantane, norbornane, and cyclohexane ring.

32. The semiconductor device according to claim 22, wherein R³ in the general formula (1) is an aromatic group selected from benzene and naphthalene ring.

33. The semiconductor device according to claim 22, wherein R⁴ in the general formula (1) is —

OH, —

COOH, and ═

O.

34. The semiconductor device according to claim 22, wherein the acid etching resistance material further comprises a repeating unit represented by the following general formula (1′

);

35. The semiconductor device according to claim 34, wherein R³ in the general formula (1′

) is an alicyclic group.

36. The semiconductor device according to claim 35, wherein the alicyclic group is selected from adamantane, norbornane, and cyclohexane ring.

37. A semiconductor device having a roughened surface comprising a semiconductor substrate;

a first electrode;

a light emitting layer formed above the semiconductor substrate; and

a second electrode;

the semiconductor device being manufactured by a method comprising;

forming a lower protective film above a part of surfaces of the semiconductor device using a first solution containing a first solvent and an acid etching resistance material, the semiconductor device having an exposed surface, the lower protective film being insoluble to a second solvent, the acid etching resistance material having a repeating unit represented by the following general formula (1);

38. The semiconductor device according to claim 37, wherein the second solvent comprises propyleneglycol monomethyl ether acetate.

39. The semiconductor device according to claim 37, wherein the upper protective film is formed of a novolac resin.

40. The semiconductor device according to claim 37, wherein R³ in the general formula (1) is an alicyclic group selected from adamantane, norbornane, and cyclohexane ring.

41. The semiconductor device according to claim 37, wherein the acid etching resistance material further comprises a repeating unit represented by the following general formula (1′

);