Please download the dossier by clicking on the dossier button x
×

Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element

  • US 20080261378A1
  • Filed: 03/31/2006
  • Published: 10/23/2008
  • Est. Priority Date: 04/04/2005
  • Status: Abandoned Application
First Claim
Patent Images

1. :

  • A GaN single crystal growth method comprising;

    a Cu layer growth process of growing a Cu layer on an underlying substrate;

    a nitridation process of forming a Cu nitride layer by nitriding at least a surface of the Cu layer;

    a GaN buffer layer growth process of growing a GaN buffer layer on the Cu nitride layer; and

    a GaN layer growth process of growing a single-crystal GaN layer on the GaN buffer layer.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×