METHOD OF MAKING SEMICONDUCTOR DEVICE

• US 20080261404A1
• Filed: 06/13/2008
• Published: 10/23/2008
• Est. Priority Date: 12/13/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Umehara, Naoto, Kozuka, Shinichi
• Granted Patent: US 8,030,216 B2
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: H01J 2237/3341 Reactive etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3

Abstract

A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

Claims

1. A method of making a semiconductor device comprising subjecting a substrate having a high-dielectric-constant insulating film constituting dielectric portions of capacitors formed thereon to etching processing using a plasma of a processing gas, wherein said processing gas contains a halogen gas, a noble gas and a reducing gas and wherein said noble gas comprises at least xenon gas.

2. A method of making a semiconductor device as claimed in claim 1, wherein said noble gas comprises at least one selected from the group consisting of helium gas, neon gas, argon gas, and krypton gas.

3. A method of making a semiconductor device as claimed in claim 1, wherein said reducing gas comprises at least one selected from the group consisting of hydrogen gas, carbon monoxide gas, and methane gas.

4. A method of making a semiconductor device as claimed in claim 1, wherein said halogen gas is a gas of at least one compound containing at least one selected from the group consisting of fluorine, chlorine, and bromine.

5. A method of making a semiconductor device as claimed in claim 1, wherein in said processing gas, an amount of said xenon gas relative to a total amount of said noble gas is not less than 10% in terms of a flow rate ratio.

6. A method of making a semiconductor device as claimed in claim 5, wherein in said processing gas, an amount of said xenon gas relative to a total amount of said noble gas is not less than 20% in terms of a flow rate ratio.