METHOD FOR TREATING BASE OXIDE TO IMPROVE HIGH-K MATERIAL DEPOSITION

• US 20080261410A1
• Filed: 06/25/2008
• Published: 10/23/2008
• Est. Priority Date: 10/29/2004
• Status: Abandoned Application

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Shih-Chang, Yang, Ming-Ho, Yao, Liang-Gei
• Application Number:
  US12/145,621
• Publication Number:
  US 20080261410A1
• Time in Patent Office: Days
• US Class Current: 438/761
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: H01L 21/0206 during, before or after processing of insulating layers
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02307 treatment by exposure to a liquid
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02315 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/3144 on silicon
• CPC Class Codes: H01L 21/31645 Deposition of Hafnium oxides, e.g. HfO2
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

A method for forming a high-K material layer in a semiconductor device fabrication process including providing a silicon semiconductor substrate or thermally growing interfacial oxide layer comprising silicon dioxide over the silicon substrate; treating with an aqueous base solution or nitridation and depositing a high-K material layer.

Claims

1. A method for forming a high-K material layer in a semiconductor device fabrication process comprising the steps of:

providing a substrate;

forming an interfacial oxide layer over said substrate;

treating said interfacial oxide layer with an aqueous ammonium hydroxide (NH₄OH) containing solution; and

,

depositing at least one high-K material layer over said substrate.

2. The method of claim 1, wherein the ammonium hydroxide (NH₄OH) containing solution further comprises at least one of H₂O₂ and HCI.

3. The method of claim 1, wherein the interfacial oxide layer is grown to a thickness of about 5 Angstroms to about 100 Angstroms.

4. The method of claim 1, wherein the step of depositing at least one high-K material layer comprises an atomic layer chemical vapor deposition (ALCVD) method.

5. The method of claim 1, further comprising a step between the formation of said interfacial oxide layer and treatment of said interfacial oxide layer with said aqueous-ammonium hydroxide containing solution, the step comprising:

dipping said interfacial oxide layer into a cleaning solution including at least one of a first solution, including H₂O₂/NH₄OH/H₂O solution, and a second solution, including HCl/NH₄OH/H₂O.

6. The method of claim 1, further comprising a step prior to the formation of said interfacial oxide layer, the step comprising:

cleaning said substrate using at least one of a first standard cleaning solution and a second cleaning solution, wherein said first cleaning solution includes a mixture of NH₄OH—

H₂O₂—

H₂O, and said second cleaning solution includes a mixture of HCl—

H₂O₂—

H₂O.

7. The method of claim 1, wherein treatment of said interfacial oxide layer with said aqueous ammonium hydroxide containing solution is carried out at a temperature from about 23°

C. to about 80°

C., for a period of from about 30 seconds to about 90 seconds.

8. The method of claim 1, wherein treatment of said interfacial oxide layer with said aqueous-ammonium hydroxide containing solution is performed by a techniques selected from a group consisting of dipping said interfacial oxide layer into said interfacial oxide layer into said aqueous ammonium hydroxide containing solution, a spin techniques with said aqueous ammonium hydroxide containing solution, and a spray techniques with said aqueous ammonium hydroxide containing solution.