PRETREATMENT PROCESSES WITHIN A BATCH ALD REACTOR
First Claim
1. A method for forming a hafnium material on a substrate within a processing chamber, comprising:
- exposing a substrate within a processing chamber to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas comprises an O3/O2 mixture having an ozone concentration within a range from about 5 atomic percent to about 30 atomic percent;
exposing the substrate sequentially to a second oxidizing gas and a deposition gas during an atomic layer deposition cycle, wherein the second oxidizing gas comprises water and the deposition gas comprises a hafnium amino compound; and
repeating the atomic layer deposition cycle to form a hafnium-containing layer having a thickness within a range from about 5 Å
to about 300 Å
.
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Accused Products
Abstract
Embodiments of the invention provide methods for forming a hafnium material on a substrate within a processing chamber. In one embodiment, a method is provided which includes exposing the substrate within the processing chamber to a first oxidizing gas during a pretreatment process, exposing the substrate sequentially to a second oxidizing gas and a deposition gas during an atomic layer deposition (ALD) cycle, wherein the second oxidizing gas contains water and the deposition gas contains a hafnium amino compound, and repeating the ALD cycle to form a hafnium-containing layer having a thickness within a range from about 5 Å to about 300 Å. In one example, the first oxidizing gas contains an O3/O2 mixture having an ozone concentration within a range from about 5 atomic percent to about 30 atomic percent.
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Citations
25 Claims
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1. A method for forming a hafnium material on a substrate within a processing chamber, comprising:
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exposing a substrate within a processing chamber to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas comprises an O3/O2 mixture having an ozone concentration within a range from about 5 atomic percent to about 30 atomic percent; exposing the substrate sequentially to a second oxidizing gas and a deposition gas during an atomic layer deposition cycle, wherein the second oxidizing gas comprises water and the deposition gas comprises a hafnium amino compound; and repeating the atomic layer deposition cycle to form a hafnium-containing layer having a thickness within a range from about 5 Å
to about 300 Å
. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for forming a hafnium material on a substrate within a processing chamber, comprising:
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exposing a substrate within a processing chamber to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas comprises an O3/O2 mixture having an ozone concentration within a range from about 1 atomic percent to about 50 atomic percent; conducting an atomic layer deposition cycle, comprising; exposing the substrate to a hafnium precursor gas comprising a hafnium amino compound for a time period of at least about 30 seconds; purging the processing chamber; exposing the substrate to a second oxidizing gas comprising water for a time period of at least about 30 seconds; and purging the processing chamber; and repeating the atomic layer deposition cycle to form a hafnium-containing layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for forming a hafnium material on a substrate within a processing chamber, comprising:
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exposing a substrate to water within a processing chamber during a pretreatment process; exposing the substrate sequentially to a hafnium precursor gas and an oxidizing precursor gas during an atomic layer deposition cycle, wherein the hafnium precursor gas comprises a hafnium amino compound, the oxidizing precursor gas comprises an O3/O2 mixture having an ozone concentration within a range from about 1 atomic percent to about 50 atomic percent, and the substrate is heated to a temperature within a range from about 200°
C. to about 400°
C. during the atomic layer deposition cycle; andrepeating the atomic layer deposition cycle to form a hafnium-containing layer. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification