×

MOSFET DEVICE INCLUDING A SOURCE WITH ALTERNATING P-TYPE AND N-TYPE REGIONS

  • US 20080265291A1
  • Filed: 04/30/2007
  • Published: 10/30/2008
  • Est. Priority Date: 04/30/2007
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor body comprising a surface;

    a transistor source located in the semiconductor body proximate the surface; and

    a first area comprising alternating p-type regions and n-type regions located in the transistor source.

View all claims
  • 32 Assignments
Timeline View
Assignment View
    ×
    ×