Heat Treating Apparatus
First Claim
1. A heat treating apparatus comprising a processing chamber for heat treating a substrate, and a support tool for supporting the substrate in the processing chamber;
- and the support tool having a support plate which contacts the substrate, and a main body for supporting the support plate, wherein the diameter of the support plate is 63 to 73 percent of the diameter of the substrate and the surface roughness Ra of at least a portion of the support plate which contacts the substrate is set from 1 μ
m to 1,000 μ
m.
3 Assignments
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Accused Products
Abstract
[Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing.
[Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 μm to 1,000 μm. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.
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Citations
10 Claims
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1. A heat treating apparatus comprising a processing chamber for heat treating a substrate, and a support tool for supporting the substrate in the processing chamber;
- and the support tool having a support plate which contacts the substrate, and a main body for supporting the support plate, wherein the diameter of the support plate is 63 to 73 percent of the diameter of the substrate and the surface roughness Ra of at least a portion of the support plate which contacts the substrate is set from 1 μ
m to 1,000 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- and the support tool having a support plate which contacts the substrate, and a main body for supporting the support plate, wherein the diameter of the support plate is 63 to 73 percent of the diameter of the substrate and the surface roughness Ra of at least a portion of the support plate which contacts the substrate is set from 1 μ
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10. A method for manufacturing a substrate comprising the steps of:
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supporting a substrate on a support plate in which the diameter is 63 to 73 percent of the substrate diameter, and the surface roughness Ra of at least the portion which contacts the substrate is 1 μ
m to 1,000 μ
m;loading the substrate supported on the support plate into a processing chamber; heat treating the substrate supported on the support plate in the processing chamber; and unloading the substrate from the processing chamber after the heat treating.
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Specification