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Semiconductor Light Emitting Element and Method for Manufacturing the Same

  • US 20080268558A1
  • Filed: 10/19/2007
  • Published: 10/30/2008
  • Est. Priority Date: 04/05/2002
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor light emitting element, comprising:

  • forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

    permitted to pass through the GaP substrate;

    forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface; and

    forming a plurality of depressions and protrusions on the side surfaces by etching with an etchant while irradiating halogen light.

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