Semiconductor Light Emitting Element and Method for Manufacturing the Same

• US 20080268558A1
• Filed: 10/19/2007
• Published: 10/30/2008
• Est. Priority Date: 04/05/2002
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Abe, Hirohisa, Konno, Kuniaki, Sugawara, Hideto, Watanabe, Yukio
• Application Number:
  US11/875,759
• Publication Number:
  US 20080268558A1
• Time in Patent Office: Days
• US Class Current: 438/22
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10155 being other than a cuboid
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

Claims

1. A method for manufacturing a semiconductor light emitting element, comprising:

forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first surface, said light emitting layer emitting light of a wavelength λ

permitted to pass through the GaP substrate;

forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially a same angle to become narrower toward the second surface; and

forming a plurality of depressions and protrusions on the side surfaces by etching with an etchant while irradiating halogen light.

2. A method for manufacturing a semiconductor light emitting element according to claim 1, wherein, in the step of forming the plurality of side surfaces, a first to a fourth side surfaces are formed, the first side surface being (1-11) oriented, the second side surface being slanted at a predetermined angle from the (111) orientation, the third side surface being (11-1) oriented, and the fourth side surface being slanted at a predetermined angle from the (1-1-1) orientation.