FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
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Abstract
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
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Citations
29 Claims
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1-14. -14. (canceled)
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15. A method for manufacturing a field-effect transistor, comprising the steps of:
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forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer; causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A field-effect transistor comprising:
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an oxide semiconductor layer having a channel region between a source electrode and a drain electrode; a gate insulator on the oxide semiconductor layer; a gate electrode on the gate insulator; wherein a concentration of hydrogen or deuterium in regions in the oxide semiconductor layer in contact with the source electrode and the drain electrode is higher than a concentration of hydrogen or deuterium in the channel region; and wherein the hydrogen or the deuterium in regions in the oxide semiconductor layer in contact with the source electrode and the drain electrode is diffused from the source electrode and the drain electrode. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29)
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Specification