METHOD FOR FORMING A NITRIDE SEMICONDUCTOR LAYER AND METHOD FOR SEPARATING THE NITRIDE SEMICONDUCTOR LAYER FROM THE SUBSTRATE
First Claim
1. A method of forming a nitride semiconductor layer, comprising the following steps:
- providing a substrate;
forming a patterned epitaxy layer on the substrate, wherein the patterned epitaxy layer comprises a pier structure;
forming a protective layer on the patterned epitaxy layer, wherein the protective layer exposes a top surface of the pier structure;
forming a nitride semiconductor layer over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer;
performing a weakening process to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer; and
separating the nitride semiconductor layer from the substrate through the connection point.
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Abstract
There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.
26 Citations
16 Claims
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1. A method of forming a nitride semiconductor layer, comprising the following steps:
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providing a substrate; forming a patterned epitaxy layer on the substrate, wherein the patterned epitaxy layer comprises a pier structure; forming a protective layer on the patterned epitaxy layer, wherein the protective layer exposes a top surface of the pier structure; forming a nitride semiconductor layer over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer; performing a weakening process to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer; and separating the nitride semiconductor layer from the substrate through the connection point. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A separating method, comprising:
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providing a substrate having a nitride semiconductor layer disposed thereon and connected thereto through a pier structure, wherein the nitride semiconductor layer, the pier structure, and a patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer; using an electrolytic solution within the space to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the pier structure and the nitride semiconductor layer; and separating the nitride semiconductor layer from the substrate. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A nitride semiconductor substrate, comprising:
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a substrate; a patterned epitaxy layer disposed on the substrate, wherein the patterned epitaxy layer comprises a pier structure; and a protective layer disposed over the substrate, wherein the protective layer covers a portion of the patterned epitaxy layer to expose a top surface of the pier structure. - View Dependent Claims (15, 16)
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Specification