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Self-Aligned Spacer Contact

  • US 20080272410A1
  • Filed: 05/02/2007
  • Published: 11/06/2008
  • Est. Priority Date: 05/02/2007
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a transistor on a substrate, the transistor comprising a gate electrode and source/drain regions on opposing sides of the gate electrode;

    a first dielectric layer over the transistor;

    a first contact opening in the first dielectric layer over at least a portion of one of the source/drain regions;

    a second dielectric layer along sidewalls of the first contact opening;

    an inter-layer dielectric (ILD) layer over the first dielectric layer; and

    a second contact opening at least partially within the first contact opening.

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