POST LAST WIRING LEVEL INDUCTOR USING PATTERNED PLATE PROCESS

• US 20080272458A1
• Filed: 07/16/2008
• Published: 11/06/2008
• Est. Priority Date: 07/27/2005
• Status: Active Grant

• Current Assignee: Anil Kumar Chinthakindi, Anthony Kendall Stamper, Douglas Duane Coolbaugh, Jeffrey Peter Gambino, John Edward Florkey, Kunal Vaed, Zhong-Xiang He
• Original Assignee: Anil Kumar Chinthakindi, Anthony Kendall Stamper, Douglas Duane Coolbaugh, Jeffrey Peter Gambino, John Edward Florkey, Kunal Vaed, Zhong-Xiang He
• Inventors: He, Zhong-Xiang, Gambino, Jeffrey Peter, Stamper, Anthony Kendall, Vaed, Kunal, Coolbaugh, Douglas Duane, Chinthakindi, Anil Kumar, Florkey, John Edward
• Granted Patent: US 7,573,117 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76852 the layer also covering the sidewalls of the conductive structure
• CPC Class Codes: H01L 21/76865 Selective removal of parts of the layer H01L21/76844 takes precedence
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2221/1036 Dual damascene with different via-level and trench-level dielectrics
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor structure. The semiconductor structure includes: a substrate having a metal wiring level within the substrate; a capping layer on and above the substrate; an insulative layer on and above the capping layer; a first layer of photo-imagable material on and above the insulative layer; a layer of oxide on and above the first layer of photo-imagable material; a second layer of photo-imagable material on and above the layer of oxide; an inductor; and a wire bond pad. A first portion of the inductor is in the second layer of photo-imagable material, the layer of oxide, the first layer of photo-imagable material, the insulative layer, and the capping layer. A second portion of the inductor is in only the second layer of photo-imagable material. The wire bond pad in only the first layer of photo-imagable material, the insulative layer, and the capping layer.

Claims

1. A semiconductor structure, comprising:

a substrate having a metal wiring level within the substrate;

a capping layer on and above a top surface of the substrate;

an insulative layer on and above a top surface of the capping layer;

a first layer of photo-imagable material on and above a top surface of the insulative layer;

a layer of oxide on and above a top surface of the first layer of photo-imagable material;

a second layer of photo-imagable material on and above a top surface of the layer of oxide;

an inductor comprising a first portion and a second portion, wherein the first portion of the inductor is in the second layer of photo-imagable material, the layer of oxide, the first layer of photo-imagable material, the insulative layer, and the capping layer, and wherein the second portion of the inductor is in only the second layer of photo-imagable material; and

a wire bond pad in only the first layer of photo-imagable material, the insulative layer, and the capping layer, wherein the first portion the inductor has a height in a first direction greater than a height of the wire bond pad in the first direction, wherein the first direction is perpendicularly directed from the top surface of substrate toward the insulative layer.

2. The structure of claim 1,

wherein a bottom surface of the second layer of photo-imagable material is in direct mechanical contact with the top surface of the layer of oxide,

wherein a bottom surface of the layer of oxide is in direct mechanical contact with the top surface of the first layer of photo-imagable material,

wherein a bottom surface of the first layer of photo-imagable is in direct mechanical contact with the top surface of the insulative layer,

wherein a bottom surface of the insulative layer is in direct mechanical contact with the top surface of the capping layer, and

wherein a bottom surface of the capping layer is in direct mechanical contact with at the top surface of the substrate.

3. The structure of claim 2,

wherein the first portion of the inductor comprises a first part having a constant first width in a second direction and disposed in both the second layer of photo-imagable material and the layer of oxide, a second part contiguous with the first part of the first portion of the inductor and having a variable second width in the second direction and disposed in the first layer of photo-imagable material, and a third part contiguous with the second part of the first portion of the inductor and having a constant third width in the second direction and disposed in both the insulative layer and the capping layer,

wherein the second variable width decreases monotonically from the first constant width at the top surface of the first layer of photo-imagable material to the third constant width at the bottom surface of the first layer of photo-imagable material, and

wherein the second direction is orthogonal to the first direction.

4. The structure of claim 3, wherein a top surface of the first part of the first portion of the inductor, a top surface of the second portion of the inductor, and a top surface of the second layer of photo-imagable material are coplanar.

5. The structure of claim 3, wherein a bottom surface of the second portion of the inductor is in direct mechanical contact with the top surface of the layer of oxide.

6. The structure of claim 3, wherein a height of the first part of the first portion of the inductor in the first direction exceeds a height of the second portion of the inductor in the first direction.

7. The structure of claim 3, wherein the metal wiring level comprises a first conductive wire and a second conductive wire, wherein a top surface of the first conductive wire is in direct mechanical contact with a bottom surface of the third part of the first portion of the inductor, wherein a top surface of the second conductive wire is in direct mechanical contact with a bottom surface of the wire bond pad, and wherein the top surface of the first conductive wire, the top surface of the second conductive wire, and the top surface of the substrate are coplanar.

8. The structure of claim 7, wherein the first conductive wire and the second conductive wire each comprise copper, and wherein the capping layer comprises a diffusion barrier that prevents copper from the first and second conductive wires from diffusing through the capping layer into the insulative layer.