Integrated Amplifier Circuit

• US 20080272843A1
• Filed: 05/05/2008
• Published: 11/06/2008
• Est. Priority Date: 05/04/2007
• Status: Abandoned Application

• Current Assignee: Atmel Germany GmbH (Microchip Technology Incorporated)
• Original Assignee: Atmel Germany GmbH (Microchip Technology Incorporated)
• Inventors: Krauss, Martin, Schwarzmueller, Marco
• Application Number:
  US12/115,521
• Publication Number:
  US 20080272843A1
• Time in Patent Office: Days
• US Class Current: 330/253
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: H03F 2203/45136 One differential amplifier in IC-block form being shown
• CPC Class Codes: H03F 2203/45291 the active amplifying circuit [AAC] comprising balancing means
• CPC Class Codes: H03F 2203/45358 the AAC comprising multiple transistors parallel coupled at their sources and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
• CPC Class Codes: H03F 2203/45371 the AAC comprising parallel coupled multiple transistors at their source and gate and drain or at their base and emitter and collector, e.g. in a cascode dif amp, only those forming the composite common source transistor or the composite common emitter transistor respectively
• CPC Class Codes: H03F 3/45183 Long tailed pairs H03F3/4521, H03F3/45237 take precedence
• CPC Class Codes: H03F 3/45475 using IC blocks as the active amplifying circuit

Abstract

An integrated amplifier circuit is provided with an amplifier that is composed of at least two amplifier regions, the amplifier regions being arranged about a symmetry point, wherein each amplifier region has a plurality of transistors in a transistor region, and wherein transistors from different amplifier areas are arranged within the same transistor region. According to an aspect, provision is made that each amplifier region has at least two transistors. Whereby the integrated amplifier circuit can be used for semiconductor components

Claims

1. Integrated amplifier circuit comprising an amplifier that is composed of at least two amplifier regions, the amplifier regions being arranged about a symmetry point, wherein each amplifier region has a plurality of transistors in a transistor region, and wherein transistors from different amplifier areas are arranged within the same transistor region.

2. The integrated amplifier circuit according to claim 1, wherein each transistor region has a symmetrical axis.

3. The integrated amplifier circuit according to claim 2, wherein at least a portion of the transistors are mirror imaged arranged along the symmetrical axis.

4. The integrated amplifier circuit according to claim 2, wherein the symmetrical axis is formed as a reflection action.

5. The integrated amplifier circuit according to claim 1, wherein the transistors in the transistor regions are arranged to be bilaterally symmetrical along the reflection axis.

6. The integrated amplifier circuit according to claim 1, wherein a reflection axis for the transistor regions pass through the symmetry point of the amplifier.

7. The integrated amplifier circuit according to claim 1, wherein the amplifier is wired as a differential amplifier.

8. The integrated amplifier circuit according to claim 1, wherein empty regions are located between the transistor regions.

9. The integrated amplifier circuit according to claim 1, wherein the transistors of the transistor region are arranged with four-way radial symmetry.