Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
First Claim
Patent Images
1. A method for fabricating an etch mask on a substrate, comprising:
- forming a layer of an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer in a trench having sidewalls and a floor, wherein the amphiphilic agent forms a layer selectively on the sidewalls of the trench and the polymer selectively wets the floor of the trench;
causing the polymer to form a hydrogel; and
removing the layer of the amphiphilic agent to form an opening between the hydrogel and the sidewalls of the trench and expose the floor of the trench.
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Abstract
Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.
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Citations
33 Claims
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1. A method for fabricating an etch mask on a substrate, comprising:
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forming a layer of an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer in a trench having sidewalls and a floor, wherein the amphiphilic agent forms a layer selectively on the sidewalls of the trench and the polymer selectively wets the floor of the trench; causing the polymer to form a hydrogel; and removing the layer of the amphiphilic agent to form an opening between the hydrogel and the sidewalls of the trench and expose the floor of the trench. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating an etch mask on a substrate, comprising:
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depositing an aqueous emulsion comprising an amphiphilic surfactant and a water-soluble, hydrogel-forming polymer into a trench having hydrophobic sidewalls and a hydrophilic floor defined by a substrate, such that the surfactant forms a layer selectively on the sidewalls and the polymer orients selectively to the floor of the trench; forming the polymer into a hydrogel; and removing the surfactant layer to form a gap between the hydrogel and the trench sidewalls and expose the substrate at the floor of the trench. - View Dependent Claims (7, 8)
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9. A method for fabricating an etch mask on a substrate, comprising:
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selectively forming a hydrophobic layer on sidewalls of a trench and a hydrophilic layer on a floor of the trench; forming a layer of an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer in the trench, wherein the amphiphilic agent forms a layer selectively on the sidewalls of the trench and the polymer orients selectively to the floor of the trench; causing the polymer to form a hydrogel; and selectively removing the layer of the amphiphilic agent to form an opening between the hydrogel and the sidewalls of the trench and expose the floor of the trench. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for fabricating an etch mask on a substrate, comprising:
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selectively forming a hydrophobic layer on sidewalls of a trench and a hydrophilic layer on a floor of the trench; forming a layer of an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer in the trench, wherein the amphiphilic agent forms a layer selectively on the sidewalls of the trench and the polymer orients selectively to the floor of the trench; crosslinking the polymer to form a hydrogel; and removing the layer of the amphiphilic agent to form an opening between the hydrogel and the sidewalls of the trench and expose the floor of the trench. - View Dependent Claims (18, 19)
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20. A method for fabricating an etch mask on a substrate, comprising:
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forming a layer of a self-assembled lamellar-phase block copolymer within a first trench having sidewalls and a floor defined by a substrate; selectively removing one of the blocks of the self-assembled layer to form openings in the layer exposing the substrate at the floor of the trench; etching through the openings to form second trenches in the substrate, the second trenches having hydrophobic sidewalls and a hydrophilic floor; depositing an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer into the second trenches such that the amphiphilic agent forms a layer selectively on the sidewalls and the polymer orients selectively to the floor of the second trenches; forming the polymer into a hydrogel; and removing the amphiphilic agent layer to form a gap between the hydrogel and the trench sidewalls and expose the substrate at the floor of the second trenches.
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21. A method for fabricating an etch mask on a substrate, comprising:
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forming a layer of a self-assembled, lamellar-phase block copolymer within a first trench defined by a substrate and having sidewalls that are preferential wetting to one block of the block copolymer, a floor that is neutral wetting to both blocks of the block copolymer, a width and a length, the self-assembled polymer layer comprising alternating lamellar blocks spanning the width of the trench and oriented perpendicular to the trench floor and substantially parallel to the sidewalls; selectively removing one of the blocks of the self-assembled layer to form openings in the polymer layer exposing the substrate at the floor of the trench; etching through the openings to form second trenches in the substrate, the second trenches having hydrophobic sidewalls and a hydrophilic floor; depositing an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer into the second trenches such that the amphiphilic agent forms a layer selectively on the sidewalls and the polymer orients selectively to the floor of the second trenches; forming the polymer into a hydrogel; and removing the amphiphilic agent layer to form a gap between the hydrogel and the trench sidewalls and expose the substrate at the floor of the second trenches.
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22. A method for fabricating an etch mask on a substrate, comprising:
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forming a film comprising a self-assembled lamellar-phase block copolymer within a first trench in a substrate to a thickness of about Lo, the block copolymer comprising first and second polymer blocks, and the trench having sidewalls that are preferential wetting to one block of the block copolymer, a floor that is neutral wetting to both blocks of the block copolymer, a width of about nLo and a length;
the self-assembled polymer film comprising a single array of perpendicular-oriented lamellar polymer domains spanning the width and extending the length of the trench in a substantially parallel orientation to the sidewalls;selectively removing one of the blocks of the self-assembled layer to form openings in the polymer layer exposing the substrate at the floor of the trench; etching through the openings to form second trenches in the substrate, the second trenches having hydrophobic sidewalls and a hydrophilic floor; depositing an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer into the second trenches such that the amphiphilic agent forms a layer selectively on the sidewalls and the polymer orients selectively to the floor of the second trenches; forming the polymer into a hydrogel; and removing the amphiphilic agent layer to form a gap between the hydrogel and the trench sidewalls and expose the substrate at the floor of the second trenches.
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23. A method for fabricating an etch mask on a substrate, comprising:
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forming a material layer over a substrate having a surface being neutral wetting to both blocks of a lamellar-phase block copolymer; forming a first trench in the material layer having a floor, sidewalls, ends, a width and a length, to expose the neutral wetting surface of the substrate at the floor of the first trench, the sidewalls being preferential wetting to one of the blocks of the lamellar-phase block copolymer; forming a layer of the lamellar-phase block copolymer within the first trench; causing the copolymer layer to self-assemble into a film comprising alternating lamellar blocks spanning the width of the trench and oriented perpendicular to the trench floor and substantially parallel to the sidewalls; selectively removing one of the lamellar blocks of the self-assembled film to form openings exposing the substrate at the floor of the trench; etching through the openings to form second trenches in the substrate, the second trenches having hydrophobic sidewalls and a hydrophilic floor; depositing an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer into the second trenches wherein the amphiphilic agent forms a layer selectively on the sidewalls and the polymer selectively wets the floor of the second trenches; causing the polymer to form a hydrogel; and removing the layer of the amphiphilic agent to form a gap between the hydrogel and the trench sidewalls and expose the substrate at the floor of the second trenches. - View Dependent Claims (24, 25, 26, 27, 28)
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29. A method for fabricating channels in a substrate, comprising:
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forming a layer of an aqueous emulsion comprising an amphiphilic agent and a water-soluble, hydrogel-forming polymer in a trench having sidewalls and a floor, wherein the amphiphilic agent forms a layer selectively on the sidewalls of the trench and the polymer selectively wets the floor of the trench; causing the polymer to form a hydrogel; removing the layer of the amphiphilic agent to form an opening between the hydrogel and the sidewalls of the trench and expose the floor of the trench; and etching an underlying substrate through the openings to form the channels in the substrate.
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30. A method for fabricating an etch mask on a substrate, comprising:
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forming a layer of an aqueous emulsion comprising an amphiphilic material in a trench having hydrophobic sidewalls and a floor, wherein the amphiphilic material forms a layer selectively on the sidewalls of the trench; crosslinking the amphiphilic material layer; drying the amphiphilic material layer; filling the trench with an inorganic material; and removing the amphiphilic material layer to form an opening between the inorganic material and the sidewalls of the trench and expose the floor of the trench. - View Dependent Claims (31, 32)
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33-38. -38. (canceled)
Specification