METHOD OF MAKING HIGH EFFICIENCY UV VLED ON METAL SUBSTRATE
First Claim
Patent Images
1. A method of fabricating a vertical light-emitting diode (VLED) structure, comprising:
- growing a sacrificial GaN layer above a sapphire substrate;
forming a light-emitting diode (LED) stack comprising at least one of AlInGaN and AlGaN above the sacrificial GaN layer;
depositing one or more layers of a metal substrate above the LED stack;
removing the sapphire substrate; and
removing the sacrificial GaN layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.
-
Citations
24 Claims
-
1. A method of fabricating a vertical light-emitting diode (VLED) structure, comprising:
-
growing a sacrificial GaN layer above a sapphire substrate; forming a light-emitting diode (LED) stack comprising at least one of AlInGaN and AlGaN above the sacrificial GaN layer; depositing one or more layers of a metal substrate above the LED stack; removing the sapphire substrate; and removing the sacrificial GaN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method of fabricating a vertical light-emitting diode (VLED) structure, comprising:
-
growing a sacrificial GaN layer above a sapphire substrate; forming an n-doped layer above the sacrificial GaN layer; forming an active layer above the n-doped layer; forming a p-doped layer above the active layer, wherein the n-doped layer, the active layer, and the p-doped layer comprise at least one of AlInGaN and AlGaN above the sacrificial GaN layer; depositing one or more layers of a metal substrate above the p-doped layer; removing the sapphire substrate; and removing the sacrificial GaN layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24)
-
Specification