PERIODIC PLASMA ANNEALING IN AN ALD-TYPE PROCESS

• US 20080274617A1
• Filed: 05/02/2007
• Published: 11/06/2008
• Est. Priority Date: 05/02/2007
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: Milligan, Robert B.
• Granted Patent: US 7,713,874 B2
• Time in Patent Office: Days
• US Class Current: 438/685
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric

Abstract

Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited reducing species for a period of time. Periodically, the substrate is contacted with a vapor phase pulse of one or more plasma-excited reducing species for a longer period of time. The steps are repeated until a metal thin film of a desired thickness is formed over the substrate.

Claims

1. An atomic layer deposition process for forming a thin film on a substrate in a reaction space, comprising in sequence:

a) depositing a layer of a first thickness by;

contacting the substrate with a vapor phase pulse of a metal source chemical;

removing excess metal source chemical from the reaction space;

contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a first period of time; and

removing excess plasma-excited reducing species and reaction by-products from the reaction space;

b) repeating step a) for a first number of cycles until the layer of the first thickness is formed;

c) contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a second period of time, the second period being not less than about twice as long as the first period; and

d) repeating steps a) through c) for a second number of cycles until a film of a second thickness is formed over the substrate.

2. The process of claim 1, further comprising:

introducing one or more reducing species at a first reactant flow rate into the reaction space during the first period of time;

setting the pressure of the reaction space to a first pressure during the first period of time; and

setting a plasma power control of the reaction space to a first power during the first period of time.

3. The process of claim 2, further comprising:

introducing one or more reducing species at a second reactant flow rate into the reaction space during the second period of time;

setting the pressure of the reaction space to a second pressure during the second period of time; and

setting the plasma power control of the reaction space to a second power during the second period of time;

wherein at least one of the first reactant flow rate, the first pressure, or the first power differs from at least one of the second reactant flow rate, the second pressure, or the second power, respectively.

4. The process of claim 1, wherein depositing a layer of a first thickness further comprises contacting the substrate with a vapor-phase pulse of one or more plasma-excited nitrogen source chemicals.

5. The process of claim 4, wherein contacting the substrate with a vapor-phase pulse of one or more plasma-excited nitrogen source chemicals occurs substantially during the first period of time.

6. The process of claim 4, wherein contacting the substrate with a vapor-phase pulse of one or more plasma-excited nitrogen source chemicals occurs during a period of time other than the first period of time.

7. The process of claim 1, wherein contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species comprises contacting the substrate with a vapor phase pulse of one or more plasma-excited species of hydrogen.

8. The process of claim 1, further comprising contacting the substrate with a vapor-phase pulse of one or more plasma-excited nitrogen source chemicals during the second period of time.

9. The process of claim 1, wherein the second thickness is not less than about twenty angstroms.

10. The process of claim 1, wherein the first thickness is not more than about ten angstroms.

11. The process of claim 1, wherein the first thickness is between one-tenth of an angstrom and one angstrom.

12. The process of claim 1, wherein at least one of the first number of cycles, the second number of cycles, the first thickness, the second thickness, the first period of time, or the second period of time is predetermined.

13. The process of claim 1, wherein contacting comprises pulsing with the aid of a carrier gas.

14. The process of claim 1, wherein the metal source chemical comprises at least one metal selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), rhenium (Re), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and osmium (Os).

15. The process of claim 1, wherein the metal source chemical is selected from the group consisting of metal halides and metal organic compounds.

16. The process of claim 15, wherein the metal source chemical is selected from the group consisting of metal bromides, metal chlorides, metal fluorides and metal iodides.

17. The process of claim 16, wherein the metal source chemical is a tantalum compound selected from the group consisting TaBr_w, TaCl_x, TaF_y and TaI_z, where ′

w′

, ′

x′

, ′

y′ and

′

z′

are integers from 1 to 6.

18. The process of claim 1, wherein the one or more plasma-excited reducing species are generated remotely.

19. The process of claim 1, wherein the one or more plasma-excited reducing species are generated in the reaction space.

20. An atomic layer deposition process for forming a thin film on a substrate in a reaction space, comprising in sequence:

a) depositing a layer of a first thickness by;

contacting the substrate with a vapor phase pulse of a metal source chemical;

removing excess metal source chemical from the reaction space;

contacting the substrate with a gas phase pulse of one or more reducing species during a first period of time; and

removing excess reducing species and reaction by-products from the reaction space;

b) repeating step a) for a first number of cycles until the layer of the first thickness is formed;

c) contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing species during a second period of time, the second period being not less than twice as long as the first period; and

d) repeating steps a) through c) for a second number of cycles until a film of a second thickness is formed over the substrate.

21. The process of claim 20, wherein depositing a layer of a first thickness further comprises contacting the substrate with a nitrogen source chemical selected from the group consisting of ammonia (NH₃) and its salts, hydrogen azide (HN₃) and the alkyl derivates thereof, hydrazine (N₂H₄) and salts of hydrazine, alkyl derivates of hydrazine, nitrogen fluoride (NF₃), hydroxyl amine (NH₂OH) and salts thereof, tert-butylamine (NH₂C(CH₃)₃) and salts thereof, allylamine (NH₂CH₂CHCH₂) and salts thereof, tertbutylamidi, ammonium fluoride, ammonium chloride, CH₃N₃, hydrazine hydrochloride dimethyl hydrazine, hydroxylamine hydrochloride, methylamine, diethylamine, triethylamine and combinations thereof.

22. The process of claim 20, further comprising contacting the substrate with a nitrogen source chemical including one or more plasma-excited species of a nitrogen-containing chemical during the second period of time.

23. The process of claim 22, wherein the nitrogen-containing chemical includes ammonia (NH₃).

24. The process of claim 22, wherein the nitrogen-containing chemical includes one or more species of N₂ and H₂.

25. The process of claim 20, wherein the second period is not shorter than about two seconds.

26. The process of claim 20, wherein the second period is at least about four times as long as the first period.

27. The process of claim 20, wherein the second thickness is at least about six times greater than the first thickness.

28. The process of claim 20, wherein the first number of cycles is greater than ten.

29. The process of claim 20, wherein the reaction space is located within a plasma-enhanced atomic layer deposition (PEALD) reactor.

30. The process of claim 20, wherein removing comprises purging with the aid of a purge gas.

31. The process of claim 30, wherein the purge gas is selected from the group consisting of hydrogen (H₂), helium (He), and argon (Ar).

32. The process of claim 20, wherein removing comprises applying a vacuum via a pumping system.

33. An atomic layer deposition process for forming a metal nitride film on a substrate in a reaction space, comprising the sequential steps of:

a) contacting the substrate with a vapor-phase pulse of a metal source chemical;

b) contacting the substrate with a vapor phase pulse of one of a reducing agent and a first nitrogen source chemical;

c) contacting the substrate with a vapor phase pulse of the other of the reducing agent and the nitrogen source chemical; and

d) repeating steps a) through c) for a first number of cycles until a first thickness of between a fraction of an angstrom and one hundred angstroms of material is deposited since either the ALD process began or an annealing step occurred;

e) contacting the substrate with a vapor phase pulse of one or more plasma-excited reducing agent and a second nitrogen source chemical for a second period of time; and

f) repeating steps a) through e) for a second number of cycles until a metal nitride thin film of a second thickness is formed over the substrate.

34. The process of claim 33, further comprising removing the metal source chemical, reducing agent, or first nitrogen source chemical, and any reaction by-products, after each of said vapor phase pulses.

35. The process of claim 33, wherein the first nitrogen source chemical and the second nitrogen source chemical are the same.

36. The process of claim 33, wherein the reducing agent comprises one or more plasma-excited species of hydrogen.

37. The process of claim 33, wherein the first nitrogen source chemical comprises ammonia (NH₃).

38. The process of claim 33, wherein the second period is at least about twice as long as the first period.

39. A semiconductor device comprising a metal film over a substrate, the metal film defining one or more vias having a width of less than about two-tenths of a micrometer, the metal film comprising no more than about 5 atomic % oxygen.

40. The semiconductor device of claim 39, wherein a metal species within the metal film includes at least one metal selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), rhenium (Re), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru) and osmium (Os).

41. The semiconductor device of claim 39, wherein the substrate is selected from the group consisting of silicon, silica, coated silicon, copper metal, dielectric materials and combinations thereof.

42. A semiconductor device comprising a via having a feature size of less than about two-tenths of a micrometer and a metal nitride film over a substrate, the metal nitride film comprising no more than about 5 atomic % oxygen.