Materials and Optical Devices Based on Group IV Quantum Wells Grown on Si-Ge-Sn Buffered Silicon

• US 20080277647A1
• Filed: 09/16/2005
• Published: 11/13/2008
• Est. Priority Date: 09/16/2004
• Status: Active Grant

• Current Assignee: Arizona Board of Regents (University of Arizona)
• Original Assignee: Arizona Board of Regents (University of Arizona)
• Inventors: Kouvetakis, John, Tolle, John, Menendez, Jose, Liao, Ling, Samara-Rubio, Dean
• Granted Patent: US 7,582,891 B2
• Time in Patent Office: Days
• US Class Current: 257/19
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/0157 using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
• CPC Class Codes: G02F 1/017 Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
• CPC Class Codes: G02F 1/01708 in an optical wavequide structure
• CPC Class Codes: G02F 2203/11 involving infrared radiation
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02452 including tin
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02535 including tin
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/035254 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
• CPC Class Codes: H01L 31/109 the potential barrier being of the PN heterojunction type
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A semiconductor structure including a single quantum well Ge_1−x1−ySi_x1Sn/Ge_1−x2Si_x2 heterostructure grown strain-free on Si(100) via a Sn_1−xGe_x buffer layer is shown.

Claims

1. A semiconductor structure comprising:

a single quantum well Ge<sub>1−

x1−

y</sub>Si_x1Sn_y/Ge<sub>1−

x2</sub>Si_x2 heterostructure grown strain-free on Si(100) via a Sn<sub>1−

x</sub>Ge_x buffer layer.

2. The semiconductor structure of claim 1 wherein the heterostructure is deposited via chemical vapor deposition.