METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER

• US 20080277656A1
• Filed: 01/08/2008
• Published: 11/13/2008
• Est. Priority Date: 01/09/2007
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: HWANG, Chi Sun, PARK, Sang Hee, CHU, Hye Yong, LEE, Jeong Ik
• Application Number:
  US11/970,737
• Publication Number:
  US 20080277656A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N₂ gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N₂ gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O₂ plasma or O₃; (h) injecting the N₂ gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.

Claims

1. A method of manufacturing a ZnO semiconductor layer for an electronic device, the method comprising the steps of:

(a) loading a substrate into a chamber;

(b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate;

(c) injecting an inert gas or N₂ gas into the chamber to remove the remaining Zn precursor;

(d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer;

(e) injecting the N₂ gas or inert gas into the chamber to remove the remaining oxygen precursor;

(f) repeating steps (a) through (e);

(g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O₂ plasma or O₃;

(h) injecting the N₂ gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and

(i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer.

2. The method according to claim 1, wherein the ZnO semiconductor layer is formed to a thickness of about 8 to 100 nm.

3. The method according to claim 1, wherein step (f) is repeated three to twenty times.

4. The method according to claim 1, wherein step (g) is repeated one to ten times.

5. The method according to claim 1, wherein the Zn precursor injected into the chamber comprises diethyl zinc or dimethyl zinc.

6. The method according to claim 1, wherein the oxygen precursor injected into the chamber comprises water (H₂O) or H₂O plasma.

7. The method according to claim 1, wherein the substrate is formed of one selected from the group consisting of glass, metal foil, plastic, and silicon.

8. The method according to claim 1, wherein steps (a) through (h) are performed using an Atomic Layer Deposition (ALD) technique.

9. The method according to claim 8, wherein the ALD technique is one selected from the group consisting of a traveling wave reactor type ALD technique, a remote plasma ALD technique, and a direct plasma ALD technique.

10. A thin film transistor (TFT) comprising a ZnO semiconductor layer manufactured using the method according to any one of claims 1 through 9, the TFT comprising:

a gate electrode disposed on a substrate;

the ZnO semiconductor layer disposed on or under the gate electrode;

source and drain electrodes electrically connected to the ZnO semiconductor layer; and

an insulating layer interposed between the gate electrode and the ZnO semiconductor layer.

11. The TFT according to claim 10, wherein the insulating layer comprises at least one layer, which is formed of one selected from the group consisting of an inorganic material, an organic material, and an organic-inorganic hybrid material.

12. The TFT according to claim 10, wherein each of the gate electrode and the source and drain electrodes comprises at least one layer, which is formed of at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), ZnO:

Al, ZnO;

Ga, Ag, Au, Al, Al/Nd, Cr, Al/Cr/Al, Ni, and Ti.