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METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER

  • US 20080277656A1
  • Filed: 01/08/2008
  • Published: 11/13/2008
  • Est. Priority Date: 01/09/2007
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a ZnO semiconductor layer for an electronic device, the method comprising the steps of:

  • (a) loading a substrate into a chamber;

    (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate;

    (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor;

    (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer;

    (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor;

    (f) repeating steps (a) through (e);

    (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3;

    (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and

    (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer.

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