SEMICONDUCTOR STRUCTURES

• US 20080277662A1
• Filed: 05/09/2008
• Published: 11/13/2008
• Est. Priority Date: 05/10/2007
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Lin, Tzer-Shen, Chiu, Kuo-Chuang
• Granted Patent: US 8,026,517 B2
• Time in Patent Office: Days
• US Class Current: 257/51
• CPC Class Codes: H01L 21/187 by direct bonding

Abstract

A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

Claims

1. A semiconductor structure, comprising:

a polycrystal substrate;

a first single crystal layer formed thereon; and

a second single crystal layer formed on the first single crystal layer.

2. The semiconductor structure as claimed in claim 1, wherein a variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%.

3. The semiconductor structure as claimed in claim 2, wherein the polycrystal substrate comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide.

4. The semiconductor structure as claimed in claim 2, wherein the first single crystal layer comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide.

5. The semiconductor structure as claimed in claim 1, wherein the first single crystal layer has no lattice mismatch with the polycrystal substrate.

6. The semiconductor structure as claimed in claim 1, further comprising a bonding layer between the polycrystal substrate and the first single crystal layer.

7. The semiconductor structure as claimed in claim 6, wherein the bonding layer comprises metal.

8. The semiconductor structure as claimed in claim 1, wherein the second single crystal layer comprises gallium nitride, gallium oxide, aluminum oxide or silicon carbide.

9. The semiconductor structure as claimed in claim 1, wherein the second single crystal layer has a thickness exceeding at least 5 μ

m.

10. The semiconductor structure as claimed in claim 8, wherein the second single crystal layer serves as a luminescent material.

11. The semiconductor structure as claimed in claim 8, wherein the second single crystal layer is applied in optoelectronic devices.