Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer

• US 20080277763A1
• Filed: 07/04/2006
• Published: 11/13/2008
• Est. Priority Date: 07/28/2005
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Hyun Tak, Chae, Byung Gyu, Kang, Kwang Yong, Yun, Sun Jin
• Application Number:
  US11/997,050
• Publication Number:
  US 20080277763A1
• Time in Patent Office: Days
• US Class Current: 257/613
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/3245 of AIIIBV compounds
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/68728 characterised by a plurality of separate clamping members, e.g. clamping fingers

Abstract

Provided are a wafer with the characteristics of abrupt metal-insulator transition (MIT), and a heat treatment apparatus and method that make it possible to mass-produce a large-diameter wafer without directly attaching the wafer to a heater or a substrate holder. The heat treatment apparatus includes a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film, and a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater.

Claims

1. A wafer with the characteristics of abrupt metal-insulator transition (MIT), the wafer comprising:

a substrate with the characteristics of abrupt MIT; and

a metal layer formed by coating or depositing a paste with good electrical and thermal conductivity on the substrate.

2. The wafer of claim 1, wherein the metal layer comprises a single-layer or multi-layer film formed using one selected from the group consisting of Li, Be, C, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Pb, Bi, Po, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, Np, Pu, a compound thereof, an oxide thereof, and an oxide of the compound.

3. A heat treatment apparatus comprising:

a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film; and

a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater.

4. The heat treatment apparatus of claim 3, wherein the thermally opaque film absorbs heat and the absorbed heat is uniformly distributed throughout the thermally opaque film.

5. The heat treatment apparatus of claim 3, wherein the thermally opaque film is formed of a thin metal film or a metal-containing paste.

6. The heat treatment apparatus of claim 3, wherein the thermally opaque film is a single-layer or multi-layer film formed using one selected from the group consisting of Li, Be, C, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Pb, Bi, Po, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, Np, Pu, a compound thereof, an oxide thereof, and an oxide of the compound.

7. The heat treatment apparatus of claim 3, wherein each of the fixing units comprises a screw-type body rotatably fixed to the edge portion of the top surface of the heater, and a handle for rotating the screw-type body.

8. The heat treatment apparatus of claim 3, wherein each of the fixing units is fixed to the edge portion of the top surface of the heater and is formed of an elastic material.

9. The heat treatment apparatus of claim 3, wherein the wafer comprises a substrate formed of a material with the characteristics of abrupt MIT;

the material with the characteristics of abrupt MIT is a p-type inorganic compound semiconductor or insulator material to which low-concentration holes are added, a p-type organic semiconductor or insulator material to which low-concentration holes are added, or an oxide thereof; and

the p-type inorganic compound semiconductor or insulator material comprises at least one of a semiconductor element including a group III-V compound or a group II-VI compound, a transition metal element, a rare earth element, and a lanthanum-based element.

10. The heat treatment apparatus of claim 3, wherein the substrate is formed of a vanadium oxide.

11. The heat treatment apparatus of claim 3, wherein the heater has a recessed region recessed to a predetermined depth in a center portion of the top surface thereof to receive the wafer.

12. The heat treatment apparatus of claim 11, wherein the recessed region has a larger diameter than the wafer such that gas generated at the wafer can be discharged through a space formed between the circumference of the recessed region and the wafer disposed in the recessed region.

13. The heat treatment apparatus of claim 3, further comprising a ring-type fixing plate disposed between the heater and the fixing units along the edge portion of the top surface of the heater while covering an edge portion of the wafer disposed in the recessed region.

14. A heat treatment method comprising:

preparing a substrate with the characteristics of abrupt MIT;

covering a first surface of the substrate with a thermally opaque film to form a wafer;

fixing the wafer to the heater with a plurality of fixing units in such a way that the thermally opaque film is exposed; and

applying heat to the wafer.

15. The heat treatment method of claim 14, wherein the thermally opaque film is formed by deposing a thin metal film on the first surface of the wafer or by coating the first surface of the wafer with a metal-containing paste.

16. The heat treatment method of claim 14, wherein the thermally opaque film is a single-layer or multi-layer film formed using one selected from the group consisting of Li, Be, C, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Pb, Bi, Po, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, U, Np, Pu, a compound thereof, an oxide thereof, and an oxide of the compound.

17. The heat treatment method of claim 14, wherein the substrate is formed of a material with the characteristics of abrupt MIT;

the material with the characteristics of abrupt MIT is a p-type inorganic compound semiconductor or insulator material to which low-concentration holes are added, a p-type organic semiconductor or insulator material to which low-concentration holes are added, or an oxide thereof; and

the p-type inorganic compound semiconductor or insulator material comprises at least one of a semiconductor element including a group III-V compound or a group II-VI compound, a transition metal element, a rare earth element, and a lanthanum-based element.

18. The heat treatment method of claim 14, wherein the heat is generated using ultraviolet rays.