Layer Transfer Process and Functionally Enhanced Integrated Circuits Products Thereby
First Claim
Patent Images
1. An integrated device structure comprising:
- a first substrate with a first set of functional elements disposed thereon;
a semiconductor device layer on said first set of functional elements; and
and a second set of functional elements on top of said device layer.
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Abstract
A structure for a semiconductor components is provided having a device layer sandwiched on both sides by other active, passive, and interconnecting components. A wafer-level layer transfer process is used to create this planar (2D) IC structure with added functional enhancements.
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Citations
22 Claims
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1. An integrated device structure comprising:
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a first substrate with a first set of functional elements disposed thereon; a semiconductor device layer on said first set of functional elements; and and a second set of functional elements on top of said device layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming an integrated device structure comprising:
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a) building a semiconductor device layer on a first substrate; b) providing a set of first functional elements to connect at least some of the devices in said semiconductor device layer; c) attaching a carrier substrate on top of said first functional elements; d) removing said first substrate to expose the bottom side of the said semiconductor device layer; e) building a set of second functional elements on said exposed bottom side of said semiconductor device layer including electrical connections to at least some of the devices in said semiconductor device layer; f) attaching a foundation substrate to the exposed surface of said second functional elements; g) removing said carrier substrate from the top of said second functional elements; and h) providing input output connections on the exposed top surface of said second functional elements. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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12. A method of forming an integrated device structure comprising:
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a) building a semiconductor device layer on a first substrate; b) providing a set of first functional elements to connect at least some of the devices in said semiconductor device layer; c) attaching a carrier substrate on top of said first functional elements; d) removing said first substrate to expose the bottom side of the said semiconductor device layer; e) building a set of second functional elements on said exposed bottom side of said semiconductor device layer including electrical connections to at least some of the devices in said semiconductor device layer; f) attaching a foundation substrate to the exposed surface of said second functional elements; g) partially thinning said carrier substrate; h) building through vias and integrated elements in said thinned carrier substrate; and i) providing input output means such as solder connections and microjoint connections on said thinned carrier substrate.
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13. A method of forming an integrated device structure comprising:
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a) building a semiconductor device layer on a first substrate; b) providing a set of first functional elements to connect at least some of the devices in said semiconductor device layer; c) attaching a carrier substrate on top of said first functional elements; d) removing said first substrate to expose the bottom side of the said semiconductor device layer producing a first intermediate structure; e) building a set of second functional elements on a foundation substrate to produce a second intermediate structure; f) bonding said first and said second intermediate structures to form a third intermediate structure; g) removing said carrier substrate, and; h) providing input output means on the exposed surface of said first functional elements to form said integrated device structure.
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14. A method of forming an integrated device structure comprising:
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a) building a semiconductor device layer on a first substrate; b) providing a set of first functional elements to connect at least some of the devices in said semiconductor device layer; c) attaching a carrier substrate on top of said first functional elements; d) removing said first substrate to expose the bottom side of the said semiconductor device layer producing a first intermediate structure; e) building a set of second functional elements on a foundation substrate to produce a second intermediate structure; f) bonding said first and said second intermediate structures to form a third intermediate structure; g) partially thinning said carrier substrate; h) building through vias and integrated passives elements in said thinned carrier substrate; and i) providing input output means on said thinned carrier substrate to form said integrated device structure.
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Specification