Light filter

• US 20080278724A1
• Filed: 05/11/2007
• Published: 11/13/2008
• Est. Priority Date: 05/11/2007
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Wu, Kuohua (Angus), Erickson, David L.
• Granted Patent: US 7,576,860 B2
• Time in Patent Office: Days
• US Class Current: 356/332
• CPC Class Codes: G01J 3/26 using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
• CPC Class Codes: G01N 21/255 Details, e.g. use of specially adapted sources, lighting or optical systems
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

Various embodiments of a light filter are disclosed.

Claims

1. A light filter, comprising:

exactly one partially reflective layer having a top and a bottom and a wedge-shaped profile defining a wedge direction;

a first transparent layer, disposed atop the partially reflective layer, comprising at least three dielectric layers of two different materials, each dielectric layer having a wedge-shaped profile oriented in the wedge direction;

a second transparent layer, disposed on the bottom of the partially reflective layer, comprising at least three dielectric layers of two different materials, each dielectric layer having a wedge-shaped profile oriented in the wedge direction.

2. A light filter in accordance with claim 1, wherein each of the first and second transparent layers comprise at least three layers of dielectric material having different and substantially randomly varying thicknesses.

3. A light filter in accordance with claim 1, wherein the first and second transparent layers each comprise alternating layers of two different dielectric materials of two different thicknesses, and a third thickness of one of the two dielectric materials in a layer adjacent to the partially reflective layer.

4. A light filter in accordance with claim 3, wherein the first and second transparent layers each comprise six alternating layers of the two different dielectric materials.

5. A light filter in accordance with claim 4, further comprising a discrete position along the filter wherein the six alternating layers of the two different dielectric materials comprise first third and fifth layers of titanium dioxide (TiO₂) having a thickness of about 51.46 nm, second and fourth layers of silicon dioxide (SiO₂) having a thickness of about 86.69 nm, and a sixth layer of silicon dioxide (SiO₂) having a thickness of about 152.58 nm, the sixth layer being positioned adjacent the partially reflective layer, and the partially reflective layer comprises a layer of aluminum (Al) having a thickness of about 14 nm.

6. A light filter in accordance with claim 1, wherein the two different dielectric materials are selected from the group consisting of titanium dioxide (TiO₂), silicon dioxide (SiO₂), tantalum oxide (TaO), niobium oxide (NbO), aluminum oxide (AlOx), zinc oxide (ZnOx), tellurium oxide (TeOx) and hafnium oxide (HfOx).

7. A light filter in accordance with claim 1, wherein the partially reflective layer is of a material selected from the group consisting of aluminum, silver, copper, gold, nickel, tin and chromium.

8. A light filter in accordance with claim 1, wherein the wedge profile comprises about a 45% thickness increase from a first end of the linearly variable filter to a second end thereof.

9. A light filter in accordance with claim 1, wherein the partially reflective layer has a thickness that ranges from about 10 nm to about 30 nm, and the first and second transparent layers have a total thickness that ranges from about 30 nm to about 150 nm.

10. A light filter in accordance with claim 1, further comprising a transparent substrate, disposed against one of the first and second transparent layers.

11. A light filter, comprising:

exactly one partially reflective layer having a top and a bottom and a wedge-shaped profile defining a wedge direction;

a first transparent layer, disposed on top of the partially reflective layer, comprising at least two dielectric layers of differing materials, each dielectric layer having a wedge-shaped profile oriented in the wedge direction; and

a second transparent layer, disposed on the bottom of the partially reflective layer, comprising at least two dielectric layers of differing materials, each dielectric layer having a wedge-shaped profile oriented in the wedge direction.

12. A light filter in accordance with claim 11, wherein the first and second transparent layers each comprise alternating layers of two different dielectric materials of two different thicknesses, and a third thickness of one of the two dielectric materials in a layer adjacent to the partially reflective layer.

13. A light filter in accordance with claim 12, wherein the two different dielectric materials are selected from the group consisting of titanium dioxide (TiO₂), silicon dioxide (SiO₂), tantalum oxide (TaO), niobium oxide (NbO), aluminum oxide (AlOx), zinc oxide (ZnOx), tellurium oxide (TeOx) and hafnium oxide (HfOx), and the partially reflective layer is of a material selected from the group consisting of aluminum, silver, copper, gold, nickel, tin and chromium.

14. A light filter in accordance with claim 11, wherein the wedge profile comprises about a 45% thickness increase from a first end of the linearly variable filter to a second end thereof, the partially reflective layer having a thickness that ranges from about 10 nm to about 30 nm, and the first and second transparent layers each having a total thickness that ranges from about 30 nm to about 150 nm.

15. A light filter in accordance with claim 11, further comprising a transparent substrate, disposed against one of the first and second transparent layers.

16. A photospectrometer, comprising:

a substrate;

a plurality of photodiodes disposed upon the substrate, each photodiode being electrically coupled to sensing circuitry for receiving a signal representative of light intensity sensed by the respective photodiode; and

a light filter disposed over the photodiodes, comprising

exactly one partially reflective layer having a top and a bottom and a wedge-shaped profile defining a wedge direction;

a first transparent layer, disposed on top of the partially reflective layer, comprising at least three dielectric layers of two differing materials, each dielectric layer having a wedge-shaped profile oriented in the wedge direction;

a second transparent layer, disposed on the bottom of the partially reflective layer, comprising at least three dielectric layers of two differing materials, each dielectric layer having a wedge-shaped profile oriented in the wedge direction.

17. A photospectrometer in accordance with claim 16, wherein the first and second transparent layers each comprise alternating layers of two different dielectric materials of two different thicknesses, and a third thickness of one of the two dielectric materials in a layer adjacent to the partially reflective layer.

18. A photospectrometer in accordance with claim 17, wherein the two different dielectric materials are selected from the group consisting of titanium dioxide (TiO₂), silicon dioxide (SiO₂), tantalum oxide (TaO), niobium oxide (NbO), aluminum oxide (AlOx), zinc oxide (ZnOx), tellurium oxide (TeOx) and hafnium oxide (HfOx), and the partially reflective layer is of a material selected from the group consisting of aluminum, silver, copper and gold.

19. A photospectrometer in accordance with claim 16, wherein the wedge profile comprises about a 45% thickness increase from a first end of the light filter to a second end thereof, the partially reflective layer having a thickness that ranges from about 10 nm to about 30 nm, and the first and second transparent layers each having a total thickness that ranges from about 30 nm to about 150 nm.

20. A photospectrometer in accordance with claim 16, further comprising a transparent substrate, disposed below the second transparent layer and above the array of photodiodes.