LIGHT EMITTING DIODE DEVICE USING NANOCRYSTAL-METAL OXIDE COMPOSITE AND METHOD FOR FABRICATING THE SAME

• US 20080280161A1
• Filed: 04/30/2008
• Published: 11/13/2008
• Est. Priority Date: 05/09/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: JANG, Eun Joo, JUN, Shin Ae, LIM, Jung Eun
• Granted Patent: US 8,362,504 B2
• Time in Patent Office: Days
• US Class Current: 428/690
• CPC Class Codes: C09K 11/02 Use of particular materials as binders, particle coatings or suspension media therefor
• CPC Class Codes: C09K 11/565 with zinc cadmium
• CPC Class Codes: C09K 11/883 with zinc or cadmium
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

A light emitting diode device includes a light emitting diode chip and a nanocrystal-metal oxide monolith having a nanocrystal-metal oxide composite disposed on a light emitting surface of the light emitting diode chip

Claims

1. A light emitting diode device comprising:

a light emitting diode chip; and

a nanocrystal-metal oxide monolith comprising a nanocrystal-metal oxide composite and being disposed on a light emitting surface of the light emitting diode chip.

2. The light emitting diode device according to claim 1, wherein the nanocrystal-metal oxide monolith has a single layer.

3. The light emitting diode device according to claim 1, wherein the nanocrystal-metal oxide monolith has two or more layers.

4. The light emitting diode device according to claim 3, wherein the nanocrystal-metal oxide monolith further comprises a plurality of nanocrystal-metal oxide composites and each layer of the two or more layers of the nanocrystal-metal oxide monolith corresponds to a nanocrystal-metal oxide composite of the plurality of nanocrystal-metal oxide composite.

5. The light emitting diode device according to claim 3, wherein each layer of the two or more layers of the nanocrystal-metal oxide monolith is arranged in one of a substantially horizontal direction or a substantially vertical direction.

6. The light emitting diode device according to claim 1, wherein a gap between the light emitting diode chip and the nanocrystal-metal oxide monolith has a range of about 0.1 mm to about 1 mm.

7. The light emitting diode device according to claim 1, wherein the nanocrystal-metal oxide composite comprises a metal nanocrystal or a semiconductor nanocrystal selected from the group consisting of II-VI compounds, III-V compounds, IV-VI compounds and IV compounds, or mixtures thereof.

8. The light emitting diode device according to claim 7, wherein:

the II-VI compounds include compounds selected from the group consisting of a binary compound, a ternary compound and a quaternary compound;

the III-V compounds include compounds selected from the group consisting of a binary compound, a ternary compound and a quaternary compound;

the IV-VI compounds include compounds selected from the group consisting of a binary compound, a ternary compound and a quaternary compound; and

the IV compounds include compounds selected from the group consisting of a unary compound and a binary compound.

9. The light emitting diode device according to claim 8, wherein:

the binary compound of the II-VI compounds includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe and HgTe;

the ternary compound of the II-VI compounds includes CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS and HgZnSe;

the quaternary compound of the II-VI compounds includes CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe;

the binary compound of the III-V compounds includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs and InSb;

the ternary compound of the III-V compounds includes GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, AlGaN, AlGaP, AlGaAs, AlGaSb, InGaN, InGaP, InGaAs, InGaSb, AlInN, AlInP, AlInAs and AlInSb;

the quaternary compound of the II-V compounds includes GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb;

the binary compound of the IV-VI compounds includes SnS, SnSe, SnTe, PbS, PbSe and PbTe;

the ternary compound of the IV-VI compounds includes SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and SnPbTe;

the quaternary compound of the IV-VI compounds includes SnPbSSe, SnPbSeTe and SnPbSTe;

the unary compound of the IV compounds includes Si and Ge; and

the binary compound of the IV compounds includes SiC and SiGe.

10. The light emitting diode device according to claim 7, wherein the nanocrystal-metal oxide composite further comprises an over coating having a II-VI compound, a III-V compound, a IV-VI compound or a IV compound, or mixtures thereof.

11. The light emitting diode device according to claim 10, wherein:

the II-VI compounds include compounds selected from the group consisting of a binary compound, a ternary compound and a quaternary compound;

the III-V compounds include compounds selected from the group consisting of a binary compound, a ternary compound and a quaternary compound;

the IV-VI compounds include compounds selected from the group consisting of a binary compound, a ternary compound and a quaternary compound; and

the IV compounds include compounds selected from the group consisting of a unary compound and a binary compound.

12. The light emitting diode device according to claim 11, wherein:

the binary compound of the II-VI compounds includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe and HgTe;

the ternary compound of the II-VI compounds includes CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS and HgZnSe;

the quaternary compound of the II-VI compounds includes CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe;

the binary compound of the III-V compounds includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs and InSb;

the ternary compound of the II-V compounds includes GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, in InNSb, InPAs, InPSb, GaAlNP, AlGaN, AlGaP, AlGaAs, AlGaSb, InGaN, InGaP, InGaAs, InGaSb, AlInN, AlInP, AlInAs and AlInSb;

the quaternary compound of the III-V compounds includes GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb;

the binary compound of the IV-VI compounds includes SnS, SnSe, SnTe, PbS, PbSe and PbTe;

the ternary compound of the IV-VI compounds includes SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and SnPbTe;

the quaternary compound of the IV-VI compounds includes SnPbSSe, SnPbSeTe and SnPbSTe;

the unary compound of the IV compounds includes Si and Ge; and

the binary compound of the IV compounds includes SiC and SiGe.

13. The light emitting diode device according to claim 1, wherein the nanocrystal-metal oxide composite comprises TiO₂, ZnO, SiO₂, SnO₂, WO₃, Ta₂O₃, BaTiO₃, BaZrO₃, ZrO₂, HfO₂, Al₂O₃, Y₂O₃, ZrSiO₄, Fe₂O₃, Fe₃O₄, CeO₂ or CrO₃, or a mixture thereof.

14. An electronic device comprising the light emitting diode device according to claim 1.

15. The electronic device according to claim 14, wherein the electronic device includes a display device, a lighting device, a backlight unit or a sensor.

16. A method for fabricating a light emitting diode having a nanocrystal-metal oxide composite, the method comprising:

forming a nanocrystal-metal oxide monolith; and

disposing the nanocrystal-metal oxide monolith onto a light emitting diode chip.

17. The method according to claim 16, wherein the forming the nanocrystal-metal oxide monolith comprises:

combining a nanocrystal, a metal oxide precursor, a solvent and a catalyst to form a nanocrystal-metal oxide precursor solution;

forming a wet nanocrystal-metal oxide monolith by charging the nanocrystal-metal oxide precursor solution into a mold and subjecting the nanocrystal-metal oxide precursor solution charged into the mold to a polymerization reaction; and

forming the nanocrystal-metal oxide monolith by drying and curing the wet nanocrystal-metal oxide monolith charged into the mold.

18. The method according to claim 16, further comprising forming a multilayered nanocrystal-metal oxide monolith by successively repeating the forming the nanocrystal-metal oxide monolith two or more times.

19. The method according to claim 18, wherein the multilayered nanocrystal-metal oxide monolith is formed by using one of a same nanocrystal-metal oxide composite or different nanocrystal-metal oxide composites.

20. The method according to claim 18, wherein each layer of the multilayered nanocrystal-metal oxide monolith is arranged in one of a horizontal direction or a vertical direction.

21. The method according to claim 18, wherein the metal oxide precursor includes dimethyl zinc, diethyl zinc, zinc acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc chloride, zinc fluoride, zinc carbonate, zinc cyanide, zinc nitrate, zinc oxide, zinc peroxide, zinc perchlorate, zinc sulfate, dimethyl cadmium, diethyl cadmium, cadmium acetate, cadmium acetylacetonate, cadmium iodide, cadmium bromide, cadmium chloride, cadmium fluoride, cadmium carbonate, cadmium nitrate, cadmium oxide, cadmium perchlorate, cadmium phosphide, cadmium sulfate, mercury acetate, mercury iodide, mercury bromide, mercury chloride, mercury fluoride, mercury cyanide, mercury nitrate, mercury oxide, mercury perchlorate, mercury sulfate, lead acetate, lead bromide, lead chloride, lead fluoride, lead oxide, lead perchlorate, lead nitrate, lead sulfate, lead carbonate, tin acetate, tin bisacetylacetonate, tin bromide, tin chloride, tin fluoride, tin oxide, tin sulfate, germanium tetrachloride, germanium oxide, germanium ethoxide, gallium acetylacetonate, gallium chloride, gallium fluoride, gallium oxide, gallium nitrate, gallium sulfate, indium chloride, indium oxide, indium nitrate or indium sulfate, or a mixture thereof.

22. The method according to claim 18, wherein the metal oxide precursor includes metal alkoxide, metal halide or metal hydroxide.