SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
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1. A semiconductor light emitting device comprising:
- a substrate; and
a quantum well active layer that has a plurality of barrier layers made of GaN-based semiconductor and a well layer made of GaN-based semiconductor sandwiched between the barrier layers and has polarized charge between the barrier layer and the well layer caused by piezo polarization,the well layer having a composition modulation so that a band gap is minimum at an interface between the well layer and one of the barrier layers more far from the substrate than the other.
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Abstract
A semiconductor light emitting device includes a substrate and a quantum well active layer. The quantum well active layer has a plurality of barrier layers made of GaN-based semiconductor and a well layer made of GaN-based semiconductor sandwiched between the barrier layers and has polarized charge between the barrier layer and the well layer caused by piezo polarization. The well layer has a composition modulation so that a band gap is minimum at an interface between the well layer and one of the barrier layers more far from the substrate than the other.
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Citations
6 Claims
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1. A semiconductor light emitting device comprising:
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a substrate; and a quantum well active layer that has a plurality of barrier layers made of GaN-based semiconductor and a well layer made of GaN-based semiconductor sandwiched between the barrier layers and has polarized charge between the barrier layer and the well layer caused by piezo polarization, the well layer having a composition modulation so that a band gap is minimum at an interface between the well layer and one of the barrier layers more far from the substrate than the other. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification