SEMICONDUCTOR DEVICE

• US 20080283837A1
• Filed: 03/25/2008
• Published: 11/20/2008
• Est. Priority Date: 05/18/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tanada, Yoshifumi
• Granted Patent: US 7,750,345 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1233 with different thicknesses of the active layer in different devices
• CPC Class Codes: H01L 27/1237 with a different composition, shape, layout or thickness of the gate insulator in different devices

Abstract

An object is to provide a structure for forming a circuit for which high-speed operation and low-voltage operation are required and a circuit for which sufficient reliability is required at the time of high voltage application in a circuit group provided over one substrate in a semiconductor device, and a manufacturing method thereof. A semiconductor device is provided with a plurality of kinds of transistors which include single-crystal semiconductor layers with different thicknesses, which are separated from a single-crystal semiconductor substrate and bonded, over one substrate. The single-crystal semiconductor layer of a transistor for which high-speed operation is required is formed thinner than that of a transistor for which high resistance to a voltage is required, so that the thickness of the single-crystal semiconductor layer is made to be thin.

Claims

1. A semiconductor device comprising:

a first circuit group and a second circuit group which are provided over a substrate having an insulating surface;

the first circuit group including;

a first transistor including a first single-crystal semiconductor layer, and a first gate insulating layer; and

the second circuit group including;

a second transistor including a second single-crystal semiconductor layer, and a second gate insulating layer,

wherein each of the first single-crystal semiconductor layer and the second single-crystal semiconductor layer is provided over the substrate with an insulating layer interposed therebetween, and

wherein the first single-crystal semiconductor layer is thinner than the second single-crystal semiconductor layer

2. The semiconductor device according to claim 1, wherein the first gate insulating layer is thinner than the second gate insulating layer.

3. The semiconductor device according to claim 1,

wherein the first circuit group includes at least one of a data driver, a logic circuit, and a read-only memory circuit of a display device, and

wherein the second circuit group includes at least one of a scan driver, a pixel portion, a power supply circuit, and a memory circuit which performs electrical writing/rewriting, of the display device.

4. The semiconductor device according to claim 1, wherein the insulating layer provided between a surface of the substrate and the first single-crystal semiconductor layer is thicker than the insulating layer provided between the surface of the substrate and the second single-crystal semiconductor layer.

5. The semiconductor device according to claim 1, further comprising a base film between a surface of the substrate and the first single-crystal semiconductor layer.

6. The semiconductor device according to claim 1, wherein the insulating layer contains silicon oxide formed by a chemical vapor deposition method using an organic silane gas.

7. The semiconductor device according to claim 1, wherein the substrate contains a light-transmitting material.

8. The semiconductor device according to claim 1, wherein the semiconductor device is a portable information terminal, a camera, a phone, a television, a computer, and an IC tag.

9. A semiconductor device comprising:

a first circuit group, a second circuit group, and a third circuit group which are provided over a substrate having an insulating surface,

the first circuit group including;

a first transistor including a first single-crystal semiconductor layer and, a first gate insulating layer;

the second circuit group including;

a second transistor including a second single-crystal semiconductor layer, and a second gate insulating layer, and

the third circuit group including;

a third transistor including an amorphous semiconductor layer or a polycrystalline semiconductor layer, and a third gate insulating layer,

wherein each of the first single-crystal semiconductor layer and the second single-crystal semiconductor layer are provided over the substrate with an insulating layer interposed therebetween, and

wherein the first single-crystal semiconductor layer is thinner than the second single-crystal semiconductor layer.

10. The semiconductor device according to claim 9, wherein the first gate insulating layer is thinner than the second gate insulating layer.

11. The semiconductor device according to claim 9,

wherein the first circuit group includes at least one of a data driver, a logic circuit, and a read-only memory circuit of a display device,

wherein the second circuit group includes at least one of a scan driver, a power supply circuit, and a memory circuit which performs electrical writing/rewriting, of the display device, and

wherein the third circuit group includes a pixel portion of the display device.

12. The semiconductor device according to claim 9, wherein the insulating layer provided between a surface of the substrate and the first single-crystal semiconductor layer is thicker than the insulating layer provided between the surface of the substrate and the second single-crystal semiconductor layer.

13. The semiconductor device according to claim 9, further comprising a base film between a surface of the substrate and the first single-crystal semiconductor layer.

14. The semiconductor device according to claim 9, wherein the insulating layer contains silicon oxide formed by a chemical vapor deposition method using an organic silane gas.

15. The semiconductor device according to claim 9, wherein the substrate contains a light-transmitting material.

16. The semiconductor device according to claim 9, wherein the semiconductor device is a portable information terminal, a camera, a phone, a television, a computer, and an IC tag.