METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD
First Claim
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1. A method for making a semiconductor apparatus comprising the steps of:
- forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate;
forming a light absorption layer on top of said laminate structure; and
irradiating an energy beam of a wavelength capable of being absorbed by said light absorption layer on said light absorption layer and simultaneously crystallizing said insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.
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Abstract
A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.
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Citations
13 Claims
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1. A method for making a semiconductor apparatus comprising the steps of:
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forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of said laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by said light absorption layer on said light absorption layer and simultaneously crystallizing said insulating film and said semiconductor thin film by means of heat generated in said light absorption layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor apparatus comprising a substrate and a laminate structure formed on said substrate and included of an insulating film made of a metal oxide and a semiconductor thin film, wherein
said insulating film and said semiconductor thin film are both crystallized.
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10. A method for making a thin film transistor substrate comprising the steps of:
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forming, on a substrate, a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film; forming a light absorption layer on top of said laminate structure; and irradiating said light absorption layer with an energy beam of a wavelength capable of being absorbed by said light absorption layer to simultaneously crystallize said gate insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.
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11. A thin film transistor substrate comprising, on a substrate, a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film, wherein said gate insulating film and said semiconductor thin film are both crystallized.
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12. A method for making a display apparatus, wherein a thin film transistor and a pixel electrode connected are formed on a substrate, the method comprising the steps of:
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forming said thin film transistor; forming a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film on said substrate; forming a light absorption layer on top of said laminate structure; and irradiating said light absorption layer with an energy beam of a wavelength capable of being absorbed by said light absorption layer to simultaneously crystallize said gate insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.
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13. A display apparatus of a type, a thin film transistor and a pixel electrode connected being provided on a substrate, wherein
a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film is provided on the substrate, and said gate insulating film and said semiconductor thin film is crystallized, respectively.
Specification