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SEMICONDUCTOR DEVICE HAVING TIPLESS EPITAXIAL SOURCE/DRAIN REGIONS

  • US 20080283906A1
  • Filed: 05/14/2007
  • Published: 11/20/2008
  • Est. Priority Date: 05/14/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a gate stack on a substrate, wherein said gate stack is comprised of a gate electrode above a gate dielectric layer and is above a channel region in said substrate; and

    a pair of source/drain regions in said substrate on either side of said channel region, wherein said pair of source/drain regions is in direct contact with said gate dielectric layer, and wherein the lattice constant of said pair of source/drain regions is different than the lattice constant of said channel region.

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