Housed active microstructures with direct contacting to a substrate

• US 20080283991A1
• Filed: 05/14/2008
• Published: 11/20/2008
• Est. Priority Date: 05/14/2007
• Status: Active Grant

• Current Assignee: Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forsching E.V.
• Original Assignee: Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forsching E.V.
• Inventors: Reinert, Wolfgang
• Granted Patent: US 8,129,838 B2
• Time in Patent Office: Days
• US Class Current: 257/685
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/032 Gluing
• CPC Class Codes: B81C 2203/035 Soldering
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/165 Containers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/16235 : Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

A microstructured component with microsensors or other active mircrocomponent is provided. The microstructured component includes a substrate and at least one housing arranged on the substrate with one or more active microstructures situated on it.

Claims

1. A microstructured component with microsensors or other active microcomponents, comprising:

a substrate, which is provided with electrical conductor tracks, and at least one housing arranged on the substrate with one or more active microstructures situated in the substrate, at least one of the active microstructures being contacted through the enclosing housing electrically with an electrical conductor track of the substrate, and a semiconductor circuit.

2. The microstructured component according to claim 1, in which the substrate has at least one application-specific integrated circuit (ASIC) for the active one or more micro-structures located therein for each of the housings arranged on it.

3. The microstructured component according to claim 2, in which the material of the substrate carrying or surrounding the at least one ASIC is an inorganic material, selected from the group consisting of Si, Sic, GaAs, and InP.

4. The microstructured component according to claim 2, in which the at least one ASIC is an electronic evaluation circuit with one or more circuits for control of one or more sensor elements present in the housing and/or for measurement of its signals and/or for communication with at least one external electrical circuit.

5. The microstructured component according to claim 2, in which at least one ASIC comprises at least one or more elements, which cause at least one of the effects selected from the group comprising signal amplification, linearization of the signals, more intelligent signal filtering, compensation of the temperature path of a signal, position control of an oscillating micro-structure, self-test of a sensor, detection of signals for plausibility, and/or usability and brightness adjustment of an image sensor.

6. The microstructured component according to claim 1, in which the one or more active microstructures is contacted electrically to the electrical conductor track of the substrate by means of a solder consisting of soft solder or obtained by diffusion soldering or by anisotropically or isotropically conductive gluing or by unfilled narrow gap glue connections.

7. The microstructured component according to claim 1, in which each housing is formed from a bottom element and a cover element, between which the one or more active microstructures is situated, which are connected to each other via a sealing frame, which determines the spacing between the surfaces of the bottom and cover element.

8. The microstructured component according to claim 7, wherein the electrical contacting of the one or more active microstructures occurs through the surrounding housing to the electrical conductor track via an electrically conducting structure, which extends through a recess in the bottom element to its outside, which faces the substrate.

9. The microstructured component according to claim 8, in which the recess widens conically toward the outside of the bottom element facing the substrate.

10. The microstructured component according to claim 9, in which the outside of the bottom element that faces the substrate is covered with a passivation layer, which leaves open only those locations of the electrically conducting structure that are provided as electrical contact points, in which a contact material, the group consisting of palladium, nickel, gold or copper, and/or a solder material, preferably in the form of unmolten solder bumps, is present on those locations of the electrically conducting structure that are provided as electrical contact points.

11. The microstructured component according to claim 10, in which at least one of the electrical contact points is situated at least partially above the recess, through which the at least one of the electrical contact points is connected to the electrically conducting structure, or in which at least one of the electrical contact points is situated at a spacing from the recess, through which the at least one of the electrical contact points is connected to the electrically conducting structure.

12. The microstructured component according to claim 1, in which each housing contains more than one active microstructure, and the sealing frame is configured so that at least two active microstructures are separated gas-tight from each other, or that the sealing frame does not hermetically enclose at least one of the active structures, and/or the sealing frame permits limited or controlled gas supply to at least one of the active microstructures.

13. The microstructured component according to claim 1, in which an inertial measurement unit or part of an inertial measurement unit is involved.

14. The microstructured component according to claim 1, in which a scalable measurement unit is involved, chosen from measurement units, including at least one image sensor, microphone, pressure sensor or mirror or other actuator or a combination thereof.

15. The microstructured component according to claim 13, comprising one or more different acceleration sensors that can detect accelerations in at least two of the three perpendicular spatial directions x, y, z and/or one or more rotation rate sensors, which can optionally detect rotational rates in at least two of the three perpendicular spatial directions x, y, z.

16. The microstructured component according to claim 1, further comprising at least one battery or at least one accumulator.

17. The microstructured component according to claim 15, in which the one or more mentioned acceleration sensors are accommodated within a housing.

18. The microstructured component according to claim 17, in which the at least one housing has one or more cavities and one or more acceleration sensors are accommodated in one or more respective cavities.

19. The microstructured component according to claim 17, in which the at least one housing has one or more cavities and at least two acceleration sensors are arranged in the same cavity.

20. The microstructured component according to claim 19, in which the at least one housing is formed from a bottom element and a cover element, which are connected via a sealing frame, and at least one acceleration sensor is fastened on the bottom element and/or at least one acceleration sensor is fastened on the cover element or is designed integral with the cover element.

21. The microstructured component according to claim 20, in which the cover element, on its surface facing the interior of the housing, carries at least one electrical contact site, which is in conducting contact with an acceleration sensor fastened on the cover element or designed integral with the sensor fastened on the cover element, and in which the at least one electrical contact site is connected electrically conducting to an electrical contact site situated on the surface of the bottom element facing the inside of the housing, which, in turn, is contacted to the electrical conductor track of the substrate through the enclosing housing electrically.

22. The microstructured component according to claim 21, in which the acceleration sensor, which is fastened to the cover element or formed integral with the cover element, is connected electrically conducting exclusively via the at least one electrical contact site situated in the cover element to the electrical contact site situated on the surface of the bottom element facing the interior of the housing.

23. The microstructured component according to claim 21, in which the one or more sealing frame and the one or more connection between the one or more contact sites consist of the same one or more material.

24. The microstructured component according to claim 15, comprising at least two different sensors that are accommodated in respective housings.

25. The microstructured component according to claim 15 in which the one or more mentioned rotation rate sensors are accommodated within a housing.

26. The microstructured component according to claim 25, in which the at least one housing has one or more cavities and one or more rotation rate sensors are accommodated in one or more respective cavities.

27. The microstructured component according to claim 25, in which the at least one housing has one or more cavities and at least two rotation rate sensors are arranged in the same cavity.

28. The microstructured component according to claim 27, in which the at least one housing is formed from a bottom element and a cover element, which are connected via a sealing frame, and at least one rotation rate sensor is fastened on the bottom element and/or at least one rotation rate sensor is fastened on the cover element or is designed integral with the cover element.

29. The microstructured component according to claim 28, in which the cover element, on its surface facing the interior of the housing, carries at least one electrical contact site, which is in conducting contact with a rotation rate sensor fastened on the cover element or designed integral with the sensor fastened on the cover element, and in which the at least one electrical contact site is connected electrically conducting to an electrical contact site situated on the surface of the bottom element facing the inside of the housing, which, in turn, is contacted to the electrical conductor track of the substrate through the enclosing housing electrically.

30. The microstructured component according to claim 29, in which the rotation rate sensor, which is fastened to the cover element or formed integral with the cover element, is connected electrically conducting exclusively via the at least one electrical contact site situated in the cover element to the electrical contact site situated on the surface of the bottom element facing the interior of the housing.

31. The microstructured component according to claim 29, in which the one or more sealing frame and the one or more connection between the one or more contact site consist of the same one or more material.