INTEGRATED DEVICE FABRICATED USING ONE OR MORE EMBEDDED MASKS
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Accused Products
Abstract
A device fabricated using a multi-layered wafer that has an embedded etch mask adapted to map a desired device structure onto an adjacent (poly)silicon layer. Due to the presence of the embedded mask, it becomes possible to delay the etching that forms the mapped structure in the (poly)silicon layer until a relatively late fabrication stage. As a result, flatness of the (poly)silicon layer is preserved for the deposition of any necessary over-layers, which substantially obviates the need for filling the voids created by the structure formation with silicon oxide.
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Citations
29 Claims
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1-13. -13. (canceled)
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14. An integrated device, comprising:
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a multi-layer wafer having a first side and a second side; a first structure formed in a first layer of the wafer, said first structure having a first outline pattern; and a second structure formed in a second layer of the wafer, said second structure having a second outline pattern, wherein; the wafer has an opening in the first side, which exposes the first and second structures, said opening having a third outline pattern, wherein the third outline pattern substantially encloses the first and second outline patterns; the second layer has a greater offset distance from the first side than the first layer; and the second outline pattern substantially encloses the first outline pattern. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification