Mm-wave scanning antenna

• US 20080284655A1
• Filed: 05/16/2007
• Published: 11/20/2008
• Est. Priority Date: 05/16/2007
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Maltsev, Alexander A., Alamouti, Siavash, Chistyakov, Nikolav, Artemenko, Alexey
• Granted Patent: US 7,683,844 B2
• Time in Patent Office: Days
• US Class Current: 343/700MS
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 19/062 for focusing
• CPC Class Codes: H01Q 21/065 Patch antenna array
• CPC Class Codes: H01Q 3/245 in the focal plane of a focussing device

Abstract

In general, in one aspect, the disclosure describes a semiconductor antenna having a plurality of antenna elements and a switching network formed in the same semiconductor die. The switching network is to control activation of the antenna elements.

Claims

1. A semiconductor antenna comprising

a plurality of antenna elements formed in a semiconductor;

a switching network formed in the semiconductor, wherein the switching network is to control activation of the antenna elements.

2. The antenna of claim 1, further comprising an RF communications tree to provide a signal path to the plurality of antenna elements.

3. The antenna of claim 2, wherein the switching network is integrated into the RF communications tree.

4. The antenna of claim 3, wherein the switching network includes at least one switch associated with each antenna element.

5. The antenna of claim 3, wherein the switching network includes a switch for each branch of the RF communications tree.

6. The antenna of claim 1, further comprising pads to receive control signals and conductors to provide the control signals to the switching network.

7. The antenna of claim 1, further comprising RF pads to receive RF signals from an RF interconnect.

8. The antenna of claim 1, wherein the semiconductor is a highly resistive material.

9. The antenna of claim 1, wherein the semiconductor is GaAs.

10. A millimeter-wave antenna system comprising

an extended hemispherical lens fabricated from high-permittivity dielectric;

and

a chip antenna fabricated from high-resistivity semiconductor and containing a two dimensional array of antenna elements and a switching network to switch the antenna elements to provide 2D scanning.

11. The system of claim 10, wherein the switching network includes a plurality of field effect transistors utilized as switches.

12. The system of claim 10, wherein the switching network includes a plurality of Radio Frequency Micro-Electro-Mechanical Systems utilized as switches.

13. The system of claim 10, further comprising an external on-chip radio, wherein the chip antenna includes a single external RF interconnection for interconnecting to the external on-chip radio.

14. The system of claim 13, wherein the chip antenna and the on-chip radio are mounted to the lens.

15. The system of claim 13, utilized in a portable computer.