SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

• US 20080284710A1
• Filed: 03/25/2008
• Published: 11/20/2008
• Est. Priority Date: 05/18/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KIMURA, Hajime, UMEZAKI, Atsushi
• Granted Patent: US 8,803,781 B2
• Time in Patent Office: Days
• US Class Current: 345/98
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: G09G 2330/021 Power management, e.g. power saving
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G11C 19/28 using semiconductor elements G11C19/14, G11C19/36 take precedence
• CPC Class Codes: G11C 19/30 using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795

Abstract

A single-crystal semiconductor layer is separated from a single-crystal semiconductor substrate and is fixed to an insulating substrate to form a TFT over the insulating substrate. Then, a driver circuit is formed using the TFT. The TFT has excellent current characteristics because an active layer is almost in a single-crystal state. Accordingly, a small thin display device with low power consumption can be manufactured. Further, a controller and a shift register which is included in a source driver are operated at the same power supply voltage. Thus, power consumption can be reduced.

Claims

1. A semiconductor device comprising:

a power supply circuit configured to output a first voltage;

a controller circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and a ground potential, and output a first signal, wherein the controller circuit is formed on a single-crystal substrate;

a pixel portion comprising a first thin film transistor formed over a glass substrate; and

a shift register circuit electrically connected to the power supply circuit and the controller circuit, and configured to be supplied with the first voltage, the ground potential and the first signal, wherein the shift register circuit comprises a second thin film transistor formed over the glass substrate.

2. The semiconductor device according to claim 1, wherein the first thin film transistor and the second thin film transistor are single-crystal thin film transistors.

3. A semiconductor device comprising:

a power supply circuit configured to output a first voltage;

a controller circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and a ground potential, and output a first signal, wherein the controller circuit is formed on a single-crystal substrate;

a pixel portion comprising a first thin film transistor formed over a glass substrate; and

a driver circuit electrically connected to the power supply circuit and the controller circuit, and configured to supply a video signal to the pixel portion, wherein the driver circuit comprises a shift register circuit configured to be supplied with the first voltage, the ground potential and the first signal, and the shift register circuit comprises a second thin film transistor formed over the glass substrate.

4. The semiconductor device according to claim 3, wherein the power supply- circuit is configured to supply a second voltage larger than the first voltage to the driver circuit.

5. The semiconductor device according to claim 3, wherein the driver circuit further comprises a level shifter circuit.

6. The semiconductor device according to claim 3, wherein the driver circuit further comprises a sampling circuit.

7. The semiconductor device according to claim 3, wherein the driver circuit further comprises a latch circuit,

8. The semiconductor device according to claim 3, wherein the driver circuit further comprises a DA converter circuit.

9. The semiconductor device according to claim 3, wherein the first thin film transistor and the second thin film transistor are single-crystal thin film transistors.

10. A semiconductor device comprising:

a power supply circuit configured to output a first voltage;

a controller circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and a ground potential, and output a first signal, wherein the controller circuit is formed on a single-crystal substrate;

a pixel portion comprising a first thin film transistor formed over a glass substrate; and

a driver circuit electrically connected to the power supply circuit and the controller circuit, and configured to supply a selection signal to the pixel portion, wherein the driver circuit comprises a shift register circuit configured to be supplied with the first voltage, the ground potential and the first signal, and the shift register circuit comprises a second thin film transistor formed over the glass substrate.

11. The semiconductor device according to claim 10, wherein the power supply circuit is configured to supply a second voltage larger than the first voltage to the driver circuit.

12. The semiconductor device according to claim 10, wherein the driver circuit further comprises a level shifter circuit.

13. The semiconductor device according to claim 10, wherein the driver circuit further comprises a buffer circuit.

14. The semiconductor device according to claim 10, wherein the first thin film transistor and the second thin film transistor are single-crystal thin film transistors.

15. A semiconductor device comprising:

a power supply circuit configured to output a first voltage;

a controller circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and a ground potential, and output a first signal, wherein the controller circuit is formed on a single-crystal substrate;

a pixel portion comprising a first thin film transistor formed over a glass substrate;

a driver circuit electrically connected to the power supply circuit and the controller circuit, and configured to supply a video signal to the pixel portion, wherein the driver circuit comprises a shift register circuit configured to be supplied with the first voltage, the ground potential and the first signal, and the shift register circuit comprises a second thin film transistor formed over the glass substrate; and

a dc-dc converter circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and supply a second voltage larger than the first voltage to the driver circuit, wherein the dc-dc converter circuit comprises a third thin film transistor formed over the glass substrate.

16. The semiconductor device according to claim 15, wherein the driver circuit further comprises a level shifter circuit.

17. The semiconductor device according to claim 15, wherein the driver circuit further comprises a sampling circuit.

18. The semiconductor device according to claim 15, wherein the driver circuit further comprises a latch circuit.

19. The semiconductor device according to claim 15, wherein the driver circuit further comprises a DA converter circuit.

20. The semiconductor device according to claim 15, wherein the first thin film transistor, the second thin film transistor and the third thin film transistor are single-crystal thin film transistors.

21. A semiconductor device comprising:

a power supply circuit configured to output a first voltage;

a controller circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and a ground potential, and output a first signal, wherein the controller circuit is formed on a single-crystal substrate;

a pixel portion comprising a first thin film transistor formed over a glass substrate; and

a driver circuit electrically connected to the power supply circuit and the controller circuit, and configured to supply a selection signal to the pixel portion, wherein the driver circuit comprises a shift register circuit configured to be supplied with the first voltage, the ground potential and the first signal, and the shift register circuit comprises a second thin film transistor formed over the glass substrate; and

a dc-dc converter circuit electrically connected to the power supply circuit, and configured to be supplied with the first voltage and supply a second voltage larger than the first voltage to the driver circuit, wherein the dc-dc converter circuit comprises a third thin film transistor formed over the glass substrate.

22. The semiconductor device according to claim 21, wherein the driver circuit further comprises a level shifter circuit.

23. The semiconductor device according to claim 21, wherein the driver circuit further comprises a buffer circuit.

24. The semiconductor device according to claim 21, wherein the first thin film transistor, the second thin film transistor and the third thin film transistor are single-crystal thin film transistors.