Image Display Device

• US 20080284933A1
• Filed: 05/13/2008
• Published: 11/20/2008
• Est. Priority Date: 05/16/2007
• Status: Active Grant

• Current Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Original Assignee: Toppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
• Inventors: Ito, Manabu, Miyazaki, Chihiro
• Granted Patent: US 7,907,224 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

Claims

1. An image display device, comprising:

a substantially transparent substrate;

a color filter layer formed on the substantially transparent substrate; and

a substantially transparent semiconductor circuit formed on the color filter layer, comprising;

a substantially transparent thin film transistor, comprising;

a source electrode;

a drain electrode;

a gate insulating film;

a gate electrode; and

a semiconductor active layer comprised of a metal oxide, the semiconductor active layer having a thickness of 10 nm-35 nm; and

a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.

2. The image display device according to claim 1,

wherein an image display element is formed on the substantially transparent semiconductor circuit.

3. The image display device according to claim 2,

wherein the image display element includes a liquid crystal cell or an electrophoresis particle.