Image Display Device
First Claim
1. An image display device, comprising:
- a substantially transparent substrate;
a color filter layer formed on the substantially transparent substrate; and
a substantially transparent semiconductor circuit formed on the color filter layer, comprising;
a substantially transparent thin film transistor, comprising;
a source electrode;
a drain electrode;
a gate insulating film;
a gate electrode; and
a semiconductor active layer comprised of a metal oxide, the semiconductor active layer having a thickness of 10 nm-35 nm; and
a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.
1 Assignment
0 Petitions
Accused Products
Abstract
One embodiment of the present invention is an image display device including a substantially transparent substrate, a color filter layer formed on the substantially transparent substrate and a substantially transparent semiconductor circuit formed on the color filter layer. The circuit includes a substantially transparent thin film transistor including a source electrode, a drain electrode, a gate insulating film, a gate electrode and a semiconductor active layer comprised of a metal oxide. The semiconductor active layer has a thickness of 10 nm-35 nm. The circuit also includes a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor.
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Citations
3 Claims
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1. An image display device, comprising:
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a substantially transparent substrate; a color filter layer formed on the substantially transparent substrate; and a substantially transparent semiconductor circuit formed on the color filter layer, comprising; a substantially transparent thin film transistor, comprising; a source electrode; a drain electrode; a gate insulating film; a gate electrode; and a semiconductor active layer comprised of a metal oxide, the semiconductor active layer having a thickness of 10 nm-35 nm; and a wiring made of a substantially transparent conductive material, the wiring having a electric contact point with the substantially transparent thin film transistor. - View Dependent Claims (2, 3)
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Specification