PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL
First Claim
Patent Images
1. A programmable phase change material (PCM) structure, comprising:
- a heater element formed at a transistor gate level of a semiconductor device;
the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough;
a layer of phase change material disposed on top of a portion of the thin wire structure; and
sensing circuitry configured to sense the resistance of the phase change material.
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Abstract
A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
28 Citations
15 Claims
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1. A programmable phase change material (PCM) structure, comprising:
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a heater element formed at a transistor gate level of a semiconductor device; the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough; a layer of phase change material disposed on top of a portion of the thin wire structure; and sensing circuitry configured to sense the resistance of the phase change material. - View Dependent Claims (2, 3, 4)
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5. A non-volatile, programmable phase change material (PCM) memory array, comprising:
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a plurality of memory cells arranged in rows and columns, with each memory cell comprising a heater element formed at a transistor gate level of a semiconductor device; the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes the heater element configured to receive programming current passed therethrough; a layer of phase change material disposed on top of a portion of the thin wire structure; and sensing circuitry configured to sense the resistance of the phase change material. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification