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SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES

  • US 20080286968A1
  • Filed: 07/01/2008
  • Published: 11/20/2008
  • Est. Priority Date: 10/21/2004
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • forming an electrode on a substrate;

    forming a passivation layer on the substrate spaced apart from the sides and edges of the electrode to form a gap between the passivation layer and the electrode; and

    forming a solderable contact on the electrode.

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