SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES
First Claim
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1. A method of forming a semiconductor device comprising:
- forming an electrode on a substrate;
forming a passivation layer on the substrate spaced apart from the sides and edges of the electrode to form a gap between the passivation layer and the electrode; and
forming a solderable contact on the electrode.
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Abstract
A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap.
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Citations
20 Claims
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1. A method of forming a semiconductor device comprising:
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forming an electrode on a substrate; forming a passivation layer on the substrate spaced apart from the sides and edges of the electrode to form a gap between the passivation layer and the electrode; and forming a solderable contact on the electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming a semiconductor device comprising:
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forming an electrode on a silicon carbide substrate; forming a passivation layer on the substrate spaced apart from the sides and edges of the electrode to form a gap between the passivation layer and the electrode; forming a solderable contact including silver on the electrode, wherein the gap separates the passivation layer from the solderable contact; applying a solderable metal layer over the top surface of the device; and etching the solderable metal layer to form solderable contact on the electrode within the gap. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification