IN SITU SILICON AND TITANIUM NITRIDE DEPOSITION
First Claim
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1. A method of processing semiconductor wafers, comprising:
- loading a batch of semiconductor wafers into a processing chamber;
depositing titanium nitride (TiN) onto the wafers in the processing chamber; and
depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps.
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Abstract
A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another.
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Citations
29 Claims
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1. A method of processing semiconductor wafers, comprising:
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loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An apparatus comprising:
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a processing chamber configured to contain a plurality of semiconductor wafers; a titanium precursor source connected to the chamber to deliver a vapor of the titanium precursor into the chamber; a nitrogen precursor source connected to the chamber to deliver a vapor of the nitrogen precursor into the chamber; a silicon precursor source connected to the chamber to deliver a vapor of the silicon precursor into the chamber; and a valve system configured to allow selective control of delivery of the vapors into the chamber. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification