Semiconductor light-emitting element and a producing method thereof

• US 20080290364A1
• Filed: 05/23/2008
• Published: 11/27/2008
• Est. Priority Date: 05/24/2007
• Status: Abandoned Application

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Kamiya, Masao, Totani, Shingo, Hasegawa, Yukitaka
• Application Number:
  US12/153,811
• Publication Number:
  US 20080290364A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light-emitting element 100 is formed including a buffer layer 102, a n-type GaN layer 103, a light-emitting layer 104 and a p-type layer 105 laminated in this order on a sapphire substrate and has a light transmitting electrode 106 made of a needle crystal of ITO.

Claims

1. A semiconductor light-emitting element formed by laminating a III group nitride compound semiconductor on a substrate, wherein, on a surface of the semiconductor light-emitting element, a thin film made of a needle crystal of indium tin oxide (ITO) formed during film formation is formed.

2. The semiconductor light-emitting element of claim 1, wherein the thin film is an-electrode of the semiconductor light-emitting element.

3. The semiconductor light-emitting element of claim 1, wherein the thin film is formed on a side surface of the semiconductor light-emitting element.

4. The semiconductor light-emitting element of claim 1, wherein the thin film is formed on a side where the III group nitride compound semiconductor is not laminated of the substrate.

5. A producing method of a semiconductor light-emitting element formed by laminating a III group nitride compound semiconductor, wherein, on a surface of the semiconductor light-emitting element, a thin film made of a needle-like crystal of indium tin oxide (ITO) is formed under a vacuum of 1.0×

10<sup>−

1</sup> Pa or less by use of a vacuum deposition method, an ion implantation method or a sputtering method.