MICROELECTRONIC ASSEMBLY AND METHOD FOR FORMING THE SAME
First Claim
1. A microelectronic assembly, comprising:
- a semiconductor substrate having first and second trenches formed thereon;
an etch stop layer on the substrate and in the first and second trenches forming first and second etch stop walls, the substrate and the etch stop layer jointly forming a cavity below the etch stop layer and between the first and second etch stop walls with an etch hole interconnecting the cavity and a first surface of the semiconductor substrate, the etch stop layer comprising an etch stop material;
an inductor on a second surface of the semiconductor substrate, at least a portion of the inductor being positioned over the cavity in the semiconductor substrate; and
a sealing layer formed over the etch hole at the first surface of the semiconductor substrate.
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Accused Products
Abstract
A microelectronic assembly and a method for forming the same are provided. The method includes forming first and second lateral etch stop walls (44, 46) in a semiconductor substrate (20) having first and second opposing surfaces (22, 24). An inductor (56) is formed on the first surface (22) of the semiconductor substrate (20) and a hole (60) is formed through the second surface (24) of the substrate (20) to expose the substrate (20) between the first and second lateral etch stop walls (44, 46). The substrate (20) is isotropically etched between the first and second lateral etch stop walls (44, 46) through the etch hole (60) to create a cavity 62) within the semiconductor substrate (20). A sealing layer (70) is formed over the etch hole (60) to seal the cavity (62).
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Citations
20 Claims
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1. A microelectronic assembly, comprising:
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a semiconductor substrate having first and second trenches formed thereon; an etch stop layer on the substrate and in the first and second trenches forming first and second etch stop walls, the substrate and the etch stop layer jointly forming a cavity below the etch stop layer and between the first and second etch stop walls with an etch hole interconnecting the cavity and a first surface of the semiconductor substrate, the etch stop layer comprising an etch stop material; an inductor on a second surface of the semiconductor substrate, at least a portion of the inductor being positioned over the cavity in the semiconductor substrate; and a sealing layer formed over the etch hole at the first surface of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13)
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10. A microelectronic assembly, comprising:
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a semiconductor substrate having first and second opposing sides; first and second lateral etch stop walls within the semiconductor substrate; an inductor on the first surface of the semiconductor substrate; a cavity within the semiconductor substrate between the first and second lateral etch stop walls; an etch hole formed though the second surface of the semiconductor substrate to the cavity; and a sealing layer formed over the etch hole to seal the cavity. - View Dependent Claims (14)
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15. A microelectronic assembly, comprising:
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a semiconductor substrate having first and second opposing surfaces and first and second trenches on the first surface of a semiconductor substrate, the semiconductor substrate comprising a semiconductor material; an etch stop layer formed over the first surface of the semiconductor substrate, the etch stop layer filling the first and second trenches; an inductor on the first surface of the semiconductor substrate; an etch hole through the second surface of the semiconductor substrate to expose the semiconductor material between the first and second trenches; a cavity within the semiconductor substrate between the first and second trenches and adjacent to the etch hole; and a sealing layer formed over the second surface of the semiconductor substrate to seal the cavity. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification