SEMICONDUCTOR DEVICE

• US 20080291092A1
• Filed: 07/30/2008
• Published: 11/27/2008
• Est. Priority Date: 07/27/2005
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: MATSUNAGA, Noriaki
• Granted Patent: US 7,764,235 B2
• Time in Patent Office: Days
• US Class Current: 343/700.0MS
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: H01Q 9/16 with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole H01Q9/44 takes precedence

Abstract

A semiconductor device includes a first level layer, a transmitting antenna provided on the first level layer and extending in a first direction, a receiving antenna provided on the first level layer and extending in the first direction, and a plurality of first wiring portions provided on the first level layer and extending in a second direction that makes an angle of 45 to 90 degrees with respect to the first direction.

Claims

1. A semiconductor device, comprising:

a first level layer;

a transmitting linear antenna provided on the first level layer and extending in a first direction;

a receiving linear antenna provided on the first level layer and extending in the first direction; and

a plurality of first wiring portions provided on the first level layer and extending in a second direction that makes an angle of 45 to 90 degrees with respect to the first direction.

2. The semiconductor device according to claim 1, further comprising:

a plurality of second wiring portions provided on the first level layer and extending in the first direction; and

a first shield layer provided between a group of the transmitting linear antenna and the receiving linear antenna, and the plurality of the second wiring portions.

3. The semiconductor device according to claim 2, wherein the first shield layer surrounds the transmitting linear antenna, the receiving linear antenna and the plurality of the first wiring portions.

4. The semiconductor device according to claim 1, wherein the angle is 90 degrees.

5. The semiconductor device according to claim 2, wherein the first shield layer is connected to a fixed potential.

6. The semiconductor device according to claim 2, further comprising:

a second level layer provided above the first level layer;

a plurality of second wiring portions provided on the second level layer and extending in the first direction; and

a second shield layer provided between the first level layer and the second level layer.

7. The semiconductor device according to claim 6, wherein the second shield layer is made of a plate.

8. The semiconductor device according to claim 6, wherein the second shield layer contains a plurality of wiring portions and is of a lattice-like shape.

9. The semiconductor device according to claim 6, wherein the second shield layer contains a plurality of wirings portions and the plurality of wiring portions are arranged to be in parallel with each other with intervals therebetween.

10. The semiconductor device according to claim 1, wherein the transmitting linear antenna and the receiving linear antenna face each other.

11. A semiconductor device, comprising:

a first level layer;

a transmitting linear antenna provided on the first level layer and extending in a first direction;

a receiving linear antenna provided on the first level layer, extending in the first direction and arranged to be away from the transmitting linear antenna by a first distance; and

a plurality of first wiring portions provided on the first level layer, extending in the first direction and arranged to be away from the transmitting linear antenna and the receiving linear antenna by a second distance which is larger than the first distance.

12. The semiconductor device according to claim 11, further comprising:

a second level layer provided above the first level layer; and

a plurality of second wiring portions provided on the second level layer, extending in the first direction and arranged to be away from the transmitting linear antenna and the receiving linear antenna by the second distance.

13. The semiconductor device according to claim 11, wherein the second distance is two times or more than the first distance.