ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME

• US 20080291350A1
• Filed: 05/19/2008
• Published: 11/27/2008
• Est. Priority Date: 05/23/2007
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sano, Masafumi, Hayashi, Ryo
• Granted Patent: US 7,855,379 B2
• Time in Patent Office: Days
• US Class Current: 349/47
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.

Claims

1. An electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, wherein

a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.

2. An electron device according to claim 1, wherein the thin film transistor has top gate structure, and the source electrode and the drain electrode are constituted by the same metal oxide layer as that constituting the device separation region and the semiconductor region, and resistance of the source electrode and resistance of the drain electrode are lower than the resistance of the semiconductor region.

3. An electron device according to claim 1, wherein the thin film transistor has bottom gate structure.

4. An electron device according to claim 1, wherein the metal oxide layer includes Zn and O.

5. An electron device according to claim 4, wherein the metal oxide layer is amorphous metal oxide further including at least one kind selected from In, Ga, Al, Fe, Sn, Mg, Ca, Si and Ge.

6. An electron device according to claim 1, wherein the device separation region has resistivity of 10⁸ Ω

·

cm or more.

7. An electron device according to claim 1, wherein the semiconductor region has resistivity of 10³ Ω

·

cm or more and 10⁷ Ω

·

cm or less.

12. A display apparatus in which the source electrode or the drain electrode described in claim 1 is connected to an electrode of a display device.

13. A display apparatus according to claim 12, wherein the display device is an electroluminescent device.

14. A display apparatus according to claim 13, wherein the display device is a liquid crystal cell or an electrophoretic particle cell.

8. A method of manufacturing an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, the method comprising:

a first step of forming a metal oxide layer; and

a second step of forming the semiconductor region by making a part of the metal oxide layer to have low resistance.

9. A method according to claim 8, wherein the second step includes a step of implanting a hydrogen ion to a part of the metal oxide layer.

10. A method according to claim 8, wherein the second step includes a step of annealing a part of the metal oxide layer by an inert gas.

11. A method according to claim 8, wherein the second step includes a step of heating a part of the metal oxide layer by a lamp.