LOW TEMPERATURE MELT-PROCESSING OF ORGANIC-INORGANIC HYBRID

• US 20080292825A1
• Filed: 07/03/2008
• Published: 11/27/2008
• Est. Priority Date: 03/08/2002
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Mitzi, David B., DeHaven, Patrick W., Medeiros, David R.
• Granted Patent: US 8,123,997 B2
• Time in Patent Office: Days
• US Class Current: 428/41.7
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 71/10 Deposition of organic active material
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 71/311 Purifying organic semiconductor materials
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/50 Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
• CPC Class Codes: Y10T 428/1471 Protective layer

Abstract

The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.

Claims

1. A process for preparing a melt-processed organic-inorganic hybrid material comprising:

applying onto a substrate an organic-inorganic hybrid material;

maintaining the substrate and/or the organic-inorganic hybrid material at a temperature above the melting point of the organic-inorganic hybrid material but below the decomposition temperature of the organic-inorganic hybrid material and the substrate for a period of time sufficient to form a uniform melt; and

cooling the substrate and/or uniform melt to an ambient temperature under conditions sufficient to form the melt-processed organic-inorganic hybrid material.

2. The process of claim 1, wherein the melt-processed organic-inorganic hybrid material is in a physical form selected from the group consisting of:

a film, a sheet and a thick section.

3. The process of claim 2, wherein the melt-processed organic-inorganic hybrid material is in the form of a film.

4. The process of claim 3, wherein the melt-processed organic-inorganic hybrid material film comprises a single crystal of the organic-inorganic hybrid material.

5. The process of claim 3, wherein the melt-processed organic-inorganic hybrid material is a polycrystalline material having a grain size equal to or greater than the dimensions between contacts in a semiconductor device.

6. The process of claim 1, further comprising:

heating the substrate prior to applying the organic-inorganic hybrid material onto the substrate to a temperature above the melting point of the organic-inorganic hybrid material.

7. The process of claim 1, further comprising:

heating the substrate and the organic-inorganic hybrid material to a temperature above the melting point of the organic inorganic hybrid material but below the decomposition temperature of the organic-inorganic hybrid material and the substrate.

8. The process of claim 1, wherein the organic-inorganic hybrid material has a melting point below the melting point or decomposition temperature of the substrate.

9. The process of claim 1, wherein the organic-inorganic hybrid material has a melting point which is below its decomposition temperature.

10. The process of claim 1, wherein the cooling to an ambient temperature is carried out by exposing the uniform melt to a temperature gradient for controlling the grain size of the melt-processed organic-inorganic hybrid material.

11. The process of claim 1, wherein the cooling to an ambient temperature is carried out at a rate from about 0.001°

C./sec to about 1000°

C./sec.

12. A melt-processed organic-inorganic hybrid material prepared according to the process of claim 1.

13. A process for preparing a laminated melt-processed organic-inorganic hybrid material, comprising:

applying onto a substrate an organic-inorganic hybrid material;

maintaining the substrate and/or the organic-inorganic hybrid material at a temperature above the melting point of the organic-inorganic hybrid material but below the decomposition temperature of the organic-inorganic hybrid material and the substrate for a period of time sufficient to form a uniform melt;

laminating a protective layer of a material on the uniform melt to produce a composite structure; and

cooling the composite structure to an ambient temperature under conditions sufficient to produce the laminated melt-processed organic-inorganic hybrid material.

14. The process of claim 13, wherein the cooling to an ambient temperature is carried out at a rate from about 0.001°

C./sec to about 1000°

C./sec.

15. The process of claim 13, wherein the cooling to an ambient temperature is carried out by exposing the uniform melt to a temperature gradient for controlling the grain size of the laminated melt-processed organic-inorganic hybrid material.

16. The process of claim 13, wherein the laminated protective layer and the substrate are fabricated from the same material.

17. A laminated melt-processed organic-inorganic hybrid material prepared by the process of claim 13.

18. A process for preparing a melt-processed organic-inorganic hybrid material comprising:

melt-spinning an organic-inorganic hybrid material onto a substrate; and

cooling the substrate and/or uniform melt to an ambient temperature under conditions sufficient to form the melt-processed organic-inorganic hybrid material.