POST LAST WIRING LEVEL INDUCTOR USING PATTERNED PLATE PROCESS
First Claim
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1. A method of forming a semiconductor substrate, comprising:
- providing a substrate having at least one metal wiring level within the substrate;
depositing a first insulative layer on a surface of the substrate;
forming a portion of a wire bond pad within the first insulative layer;
depositing a second insulative layer on the first insulative layer;
forming an inductor within the second insulative layer using a patterned plate process; and
forming a remaining portion of the wire bond pad within the second insulative layer, wherein at least a portion of the wire bond pad is substantially co-planar with the inductor.
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Abstract
A method of forming a semiconductor substrate. A substrate is provided. At least one metal wiring level is within the substrate. A first insulative layer is deposited on a surface of the substrate. A portion of a wire bond pad is formed within the first insulative layer. A second insulative layer is deposited on the first insulative layer. An iductor is within the second insulative layer using a patterned plate process. A remaining portion of the wire bond pad is formed within the second insulative layer, wherein at least a portion of the wire bond pad is substantially co-planar with the inductor.
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Citations
6 Claims
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1. A method of forming a semiconductor substrate, comprising:
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providing a substrate having at least one metal wiring level within the substrate; depositing a first insulative layer on a surface of the substrate; forming a portion of a wire bond pad within the first insulative layer; depositing a second insulative layer on the first insulative layer; forming an inductor within the second insulative layer using a patterned plate process; and forming a remaining portion of the wire bond pad within the second insulative layer, wherein at least a portion of the wire bond pad is substantially co-planar with the inductor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification