METHOD OF FORMING AMORPHOUS CARBON FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
First Claim
1. A method of forming an amorphous carbon film, the method comprising:
- loading a substrate into a chamber; and
forming an amorphous carbon film on the substrate by vaporizing a chain-structured liquid hydrocarbon compound including one double bond, supplying the compound to the chamber, and ionizing the compound.
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Abstract
The present invention relates to a method of forming an amorphous carbon film and a method of manufacturing a semiconductor device using the method. An amorphous carbon film is formed on a substrate by vaporizing a liquid hydrocarbon compound, which has chain structure and one double bond, and supplying the compound to a chamber, and ionizing the compound. The amorphous carbon film is used as a hard mask film.
It is possible to easily control characteristics of the amorphous carbon film, such as a deposition rate, an etching selectivity, a refractive index (n), a light absorption coefficient (k) and stress, so as to satisfy user'"'"'s requirements. In particular, it is possible to lower the refractive index (n) and the light absorption coefficient (k). As a result, it is possible to perform a photolithography process without an antireflection film that prevents the diffuse reflection of a lower material layer.
Further, a small amount of reaction by-product is generated during a deposition process, and it is possible to easily remove reaction by-products that are attached on the inner wall of a chamber. For this reason, it is possible to increase a cycle of a process for cleaning a chamber, and to increase parts changing cycles of a chamber. As a result, it is possible to save time and cost.
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Citations
18 Claims
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1. A method of forming an amorphous carbon film, the method comprising:
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loading a substrate into a chamber; and forming an amorphous carbon film on the substrate by vaporizing a chain-structured liquid hydrocarbon compound including one double bond, supplying the compound to the chamber, and ionizing the compound. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device, the method comprising:
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forming a material layer on a substrate on which predetermined structures are formed; loading the substrate, on which the material layer is formed, into a chamber; forming an amorphous carbon film on the substrate by vaporizing a chain-structured liquid hydrocarbon compound including one double bond, and supplying the compound to the chamber, and ionizing the compound; forming photosensitive film patterns on the amorphous carbon film, and etching the amorphous carbon film while using the photosensitive film patterns as an etching mask; and etching the exposed material layer, and removing the amorphous carbon film and the photosensitive film patterns. - View Dependent Claims (16, 17, 18)
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Specification