PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING PHOTOVOLTAIC DEVICES
First Claim
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13. A photovoltaic device comprising:
- a substrate;
a reflective electrode located above the substrate,a light transmissive electrode located above the reflective electrode;
a semiconductor layer stack between the reflective electrode and the light transmissive electrode, the semiconductor layer stack comprising first and second sub-layers, the second sub-layer comprising a polycrystalline semiconductor material having a crystalline fraction of at least approximately 85%; and
an optical spacer layer between the reflective electrode and the semiconductor layer stack, the optical spacer layer comprising a conductive and light transmissive material.
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Abstract
A photovoltaic device includes a supporting layer, a semiconductor layer stack, and a conductive and light transmissive layer. The supporting layer is proximate to a bottom surface of the device. The semiconductor layer stack includes first and second semiconductor sub-layers, with the second sub-layer having a crystalline traction of at least approximately 85%. A conductive and light transmissive layer between the supporting layer and the semiconductor layer stack, where an Ohmic contact exists between the first semiconductor sub-layer and the conductive and light transmissive layer.
133 Citations
120 Claims
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13. A photovoltaic device comprising:
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a substrate; a reflective electrode located above the substrate, a light transmissive electrode located above the reflective electrode; a semiconductor layer stack between the reflective electrode and the light transmissive electrode, the semiconductor layer stack comprising first and second sub-layers, the second sub-layer comprising a polycrystalline semiconductor material having a crystalline fraction of at least approximately 85%; and an optical spacer layer between the reflective electrode and the semiconductor layer stack, the optical spacer layer comprising a conductive and light transmissive material. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A photovoltaic device comprising:
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a light transmissive superstrate; a light transmissive electrode located above the superstrate; a reflective electrode located above the light transmissive electrode; a semiconductor layer stack between the reflective electrode and the light transmissive electrode, the semiconductor layer stack comprising first and second sub-layers, the second sub-layer comprising a polycrystalline semiconductor material having a crystalline fraction of at least approximately 85%; and an optical spacer layer between the reflective electrode and the semiconductor layer stack, the optical spacer layer comprising a conductive and light transmissive material. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A method for manufacturing a photovoltaic device, the method comprising:
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providing a supporting layer proximate to a bottom surface of the device; depositing a conductive and light transmissive layer above the supporting layer; depositing a semiconductor layer stack in an amorphous state above the conductive and light transmissive layer, the semiconductor layer stack comprising first and second sub-layers; and increasing a level of crystallinity in the second sub-layer, the second sub-layer having a crystalline fraction of at least approximately 85% after increasing the level of crystallinity. - View Dependent Claims (1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66)
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53-1. The method of claim 52, wherein the semiconductor layer stack comprises a third sub-layer, the second sub-layer disposed between the first and third sub-layers, the first and third sub-layers each doped with different types of dopants.
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67. A method for manufacturing a photovoltaic device, the method comprising:
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providing a substrate; depositing a reflective electrode above the substrate; depositing an optical spacer layer above the reflective electrode, the optical spacer layer comprising a conductive and light transmissive material; depositing a semiconductor layer stack above the optical spacer layer, the semiconductor layer stack deposited in an amorphous state, the semiconductor layer stack comprising first and second sub-layers; increasing a level of crystallinity in the second sub-layer, the second sub-layer having a crystalline fraction of at least 85% after increasing the level of crystallinity; and depositing a light transmissive electrode above the semiconductor layer stack. - View Dependent Claims (68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87)
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88. A method for manufacturing a photovoltaic device, the method comprising:
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providing a light transmissive superstrate; depositing a light transmissive electrode above the superstrate; depositing a semiconductor layer stack above the light transmissive electrode, the semiconductor layer stack deposited in an amorphous state, the semiconductor layer stack comprising first and second sub-layers; increasing a level of crystallinity in the second sub-layer, the second sub-layer having a crystalline fraction of at least 85% after increasing the level of crystallinity; depositing an optical spacer layer above the semiconductor layer stack, the optical spacer layer comprising a conductive and light transmissive material; and depositing a reflective electrode above the optical spacer layer. - View Dependent Claims (89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107)
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108. A photovoltaic device comprising:
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a first electrode comprising a light transmissive material; a second electrode comprising a reflective material; and a semiconductor layer between the first electrode and the second electrode, the semiconductor layer comprising at least three sub-layers, including a first sub-layer, a second sub-layer and a third sub-layer, the second sub-layer comprising a polycrystalline semiconductor material having a crystalline fraction of at least approximately 85%, wherein at least two dopant junctions exist in the semiconductor layer, a first junction between the first and second sub-layers and a second junction between the second and third sub-layers. - View Dependent Claims (109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120)
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Specification